IS42S32400E-6TLI

The IS42S32400E-6TLI is a 128Mbit synchronous DRAM organized as 4M × 32 with internal quad-bank architecture and pipeline operation for high-speed data transfer. All input and output signals are referenced to the rising edge of the clock, enabling fully synchronous operation at the device's rated frequencies.

This SDRAM is intended for systems that require a 128Mbit parallel memory with programmable burst modes, selectable CAS latency, LVTTL interface signaling and options for commercial and industrial temperature ranges.

Key Features

• Memory Core 128Mbit capacity organized as 4M × 32 with four internal banks for interleaved operation and hidden row access/precharge.
• Performance Supports a clock frequency up to 166 MHz (–6 speed grade) with access time from clock of 5.4 ns at CAS latency = 3; programmable CAS latency of 2 or 3 clocks.
• Burst and Access Modes Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); burst read/write and burst read/single write supported with burst termination by burst stop and precharge command.
• Refresh and Self-Maintenance Auto Refresh (CBR) and Self Refresh supported; refresh counts include 4K cycles per 16 ms (A2 grade) or 4K cycles per 64 ms (Commercial, Industrial, A1 grade).
• Interface Parallel memory interface with LVTTL-compatible signaling; random column address every clock cycle for efficient column access.
• Power Single power supply operation at 3.3 V ±0.3 V (3.0–3.6 V specified).
• Package and Temperature Available in an 86-pin TSOP-II (86-TFSOP, 0.400" / 10.16 mm width) package; operating temperature options include Industrial range of −40°C to +85°C.

Typical Applications

• Synchronous high-speed buffering Use where fully synchronous, burst-capable DRAM is required for high-throughput data transfers.
• Parallel memory subsystems Fits designs that require a 4M × 32 organization and a parallel LVTTL interface for system memory expansion.
• Industrial-temperature deployments Suitable for systems that require operation across −40°C to +85°C ambient conditions.

Unique Advantages

• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleaved burst sequencing allow designers to tune transfer behavior to system needs.
• Predictable synchronous timing: Fully synchronous inputs and outputs referenced to the rising clock edge simplify timing closure and system integration.
• Quad-bank architecture: Internal banking hides row access/precharge latency and improves effective throughput for interleaved access patterns.
• Selectable CAS latency and fast access: CAS latency options (2 or 3) and a 5.4 ns access time from clock (CL = 3, –6 grade) support tight timing requirements.
• Single-supply convenience: Standard 3.3 V ±0.3 V power simplifies power-rail design for legacy 3.3 V systems.
• Temperature and package options: 86-pin TSOP-II packaging and industrial temperature rating provide a compact footprint and extended ambient range for rugged designs.

Why Choose IS42S32400E-6TLI?

The IS42S32400E-6TLI is positioned for designs that need a proven 128Mbit synchronous DRAM with programmable burst capability, selectable CAS latency, and a parallel LVTTL interface. Its quad-bank organization and pipeline architecture provide predictable high-speed operation while the single 3.3 V supply and TSOP-II package simplify system integration.

This device is appropriate for projects requiring documented performance and timing characteristics, industrial temperature operation, and standard refresh options as specified in the device datasheet and technical specification.

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