IS42S32400E-6TLI-TR

The IS42S32400E-6TLI-TR is a 128 Mbit synchronous DRAM organized as 4M × 32 with a quad-bank pipeline architecture. It implements fully synchronous operation with all signals referenced to the rising edge of the clock to support high-speed parallel memory transfers.

Designed for board-level memory subsystems and embedded designs that require a 128 Mbit parallel SDRAM, this device offers programmable latency and burst options, on-chip refresh management, and operation from a 3.3 V single supply.

Key Features

• Memory Core 128 Mbit capacity organized as 4M × 32 with four internal banks for concurrent bank access and row access/precharge hiding.
• Performance Clock frequency options up to 166 MHz; access time as low as 5.4 ns (CAS Latency = 3); programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing Programmable burst lengths (1, 2, 4, 8, full page) with selectable sequential or interleaved burst sequences; supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh and Power Auto Refresh and Self Refresh supported; 4096 refresh cycles per specified refresh window (16 ms for A2 grade or 64 ms for Commercial/Industrial/A1 grades). Single power supply: 3.3 V ±0.3 V (specified supply range 3.0 V to 3.6 V).
• Interface LVTTL signaling with a parallel memory interface optimized for synchronous operation referenced to the clock edge.
• Package and Mounting Available in an 86‑pin TSOP‑II package (86‑TFSOP, 0.400", 10.16 mm width) for surface-mount board implementation.
• Operating Temperature Commercial and Industrial operating options are documented (Commercial: 0°C to +70°C; Industrial: -40°C to +85°C). The product data lists an industrial operating range of -40°C to +85°C (TA).

Typical Applications

• Embedded memory subsystems — Provides 128 Mbit of parallel SDRAM for board-level designs requiring synchronous DRAM storage.
• High-speed data buffering — Quad-bank architecture and programmable CAS/burst settings support burst-oriented buffering and streaming use cases.
• General-purpose system memory — Suitable for systems that require standard LVTTL parallel SDRAM interfaces and 3.3 V single-supply operation.

Unique Advantages

• Configurable performance — Selectable CAS latency (2 or 3) and programmable burst lengths let designers tune throughput and latency to application needs.
• Quad-bank pipeline — Internal bank architecture hides row access/precharge to improve effective throughput for interleaved and sequential accesses.
• Standard 3.3 V supply — Operates from a single 3.3 V supply (±0.3 V) simplifying power-rail design for legacy and existing 3.3 V systems.
• On-chip refresh management — Auto Refresh and Self Refresh modes with documented refresh counts help maintain data integrity with minimal external control.
• Board-ready package — 86-pin TSOP‑II package with 10.16 mm width provides a compact, surface-mount option for PCB implementations.
• Documented timing — Key timing parameters (clock frequencies, access times, CAS latencies) are specified to aid system timing closure and validation.

Why Choose IS42S32400E-6TLI-TR?

The IS42S32400E-6TLI-TR positions itself as a straightforward, standards-based 128 Mbit synchronous DRAM for designs that require deterministic, clock-referenced parallel memory. With programmable latency and burst modes, quad-bank internal architecture, and on-chip refresh support, it is well suited to embedded and board-level subsystems that need predictable timing and 3.3 V operation.

Engineers specifying this device benefit from explicit timing and refresh documentation, industry-standard LVTTL interfacing, and a compact 86‑pin TSOP‑II package that integrates into conventional PCB designs.

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