IS42S32400E-6TL-TR

The IS42S32400E-6TL-TR is a 128Mbit synchronous dynamic RAM (SDRAM) organized as 4M × 32 with a quad-bank internal architecture and pipeline operation. It provides parallel SDRAM storage with programmable burst operation, designed for systems operating from a 3.3 V supply.

This device targets commercial-temperature applications requiring up to 166 MHz clock operation (CAS latency = 3) and fast access timing (5.4 ns access time at CL=3). It is offered in an 86-pin TSOP-II package (10.16 mm width) for board-level integration.

Key Features

• Core Architecture 128 Mbit SDRAM organized as 1M × 32 × 4 banks with internal bank architecture and pipeline operation for high-speed data transfer.
• Memory Capacity & Organization 4M × 32 organization delivering 128 Mbit of volatile storage in a single device.
• Performance & Timing Clock frequency support up to 166 MHz (CL=3) with documented access time of 5.4 ns (CAS latency = 3) and CAS latency options of 2 or 3 clocks.
• Interface & Burst Control Fully synchronous LVTTL-referenced interface with programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations.
• Refresh & Self-Maintenance Auto Refresh (CBR) and Self Refresh support with 4096 refresh cycles per 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade) as specified.
• Power Single power supply operation at 3.3 V ±0.3 V (specified voltage range 3.0 V to 3.6 V).
• Package & Temperature 86-pin TSOP-II (0.400", 10.16 mm width) package; commercial operating temperature range 0 °C to +70 °C.

Typical Applications

• Embedded systems Use as onboard parallel SDRAM where 128 Mbit capacity and 3.3 V operation are required for system memory.
• Memory expansion on PCBs Board-level integration requiring a 86-pin TSOP-II footprint and a 4M × 32 memory organization.
• Commercial electronics Devices and modules operating within a 0 °C to +70 °C range that need synchronous DRAM with programmable burst and refresh features.

Unique Advantages

• Deterministic synchronous operation All signals referenced to the rising clock edge for predictable timing and integration with synchronous systems.
• Flexible burst control Programmable burst lengths and sequences enable optimized data transfers for a variety of access patterns.
• Embedded refresh options Auto Refresh and Self Refresh modes with documented refresh cycle support reduce external refresh management complexity.
• Multiple CAS latency options Selectable CAS latency (2 or 3) to balance clock rate and access timing requirements; CL=3 supports up to 166 MHz operation.
• Standard 3.3 V supply Single 3.3 V ±0.3 V supply simplifies power system design for platforms using standard SDRAM voltage.
• Compact TSOP-II package 86-pin TSOP-II footprint (10.16 mm width) provides a board-friendly package for high-density designs.

Why Choose IS42S32400E-6TL-TR?

The IS42S32400E-6TL-TR combines a 128 Mbit SDRAM capacity with a synchronous, quad-bank pipeline architecture and programmable burst features to meet mid-density memory requirements on commercial PCBs. Its support for up to 166 MHz operation (CL=3), selectable CAS latencies, and embedded refresh options make it suitable for designs that need predictable synchronous performance and flexible data transfer modes.

This device is appropriate for engineers specifying parallel SDRAM in systems operating from a 3.3 V supply within the commercial temperature range. Its TSOP-II package and defined timing parameters help streamline board integration and timing analysis during development and production.

Request a quote or contact sales to discuss pricing, lead time and availability for the IS42S32400E-6TL-TR.