IS42S32400E-6BL-TR

The IS42S32400E-6BL-TR is a 128Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with quad-bank architecture. It is designed for high-speed data transfer in 3.3V memory systems and implements a pipelined, fully synchronous interface with all signals referenced to the rising clock edge.

This device targets commercial temperature systems and provides flexible timing and burst options to support a range of parallel memory subsystem requirements where a 128Mbit SDRAM density and a 90‑TFBGA package are required.

Key Features

• Core Architecture  Quad-bank organization implemented as 1M × 32 × 4 banks (4M × 32 total) for internal banked operation and row access/precharge hiding.
• Memory Type & Capacity  128Mbit SDRAM with parallel memory interface and LVTTL signaling.
• Performance  Clock frequency support for 166 MHz (‑6) with programmable CAS latency (2 or 3 clocks) and an access time from clock of 5.4 ns (CAS latency = 3).
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh and Power Modes  Supports Auto Refresh (CBR) and Self Refresh. Refresh options include 4096 refresh cycles per refresh period depending on grade (A2: 16 ms; Commercial/Industrial/A1: 64 ms).
• Power Supply  Single-supply operation at 3.3V nominal (specified 3.0 V to 3.6 V).
• Package & Temperature  90‑ball TF‑BGA (8 × 13) package; commercial operating temperature range 0°C to +70°C.

Typical Applications

• 3.3V memory subsystems  Used as main or buffer SDRAM in systems designed for 3.3V VDD/VDDG memory architectures.
• High-speed data buffering  Employed where synchronous, pipelined transfers and programmable burst modes are required for burst read/write operations.
• Embedded systems requiring 128Mbit density  Suitable for designs that need a parallel SDRAM device in a compact 90‑TFBGA package.

Unique Advantages

• High-throughput operation: 166 MHz clock support (‑6) enables faster synchronous transfers where higher clock rates are required.
• Low-latency access: Access time from clock of 5.4 ns (CAS latency = 3) provides predictable, short read access latency for time-sensitive transfers.
• Flexible burst control: Programmable burst length and sequence let designers tune data transfer patterns to match system access behavior and maximize throughput.
• Standard 3.3V single-supply: 3.0–3.6 V supply range simplifies integration into conventional 3.3V memory systems.
• Compact BGA footprint: 90‑TFBGA (8 × 13) package offers a small board area for high-density designs.
• Robust refresh options: Auto and self refresh modes with documented refresh cycle counts provide deterministic data retention control across supported grades.

Why Choose IS42S32400E-6BL-TR?

The IS42S32400E-6BL-TR combines 128Mbit SDRAM density with a quad-bank, fully synchronous architecture to deliver predictable, high-speed parallel memory performance in a compact 90‑TFBGA package. Its programmable burst modes, selectable CAS latency, and support for Auto/Self Refresh provide design flexibility for a range of memory subsystem requirements operating at 3.3V.

This device is suited to designers seeking a commercial‑grade SDRAM component (0°C to +70°C) that balances throughput, latency, and package density for embedded and system-level memory applications.

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