IS42S32400E-6BLI

The IS42S32400E-6BLI is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture. It implements a fully synchronous pipeline architecture with all signals referenced to the rising edge of the clock.

Designed for systems requiring high-speed synchronous DRAM, this device delivers up to 166 MHz operation (‑6 timing), programmable burst modes and CAS latency options, and is supplied in a compact 90‑TFBGA package for board‑level integration.

Key Features

• Core Architecture  Fully synchronous SDRAM organized as 1M × 32 × 4 banks for pipelined, high-speed data transfer.
• Memory Density & Organization  128 Mbit total capacity organized as 4M × 32.
• Performance  Clock frequency up to 166 MHz (‑6 device); access time from clock as low as 5.4 ns at CAS latency = 3 for the ‑6 option.
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); CAS latency selectable (2 or 3 clocks).
• Refresh and Power Management  Supports Auto Refresh (CBR) and Self Refresh. Refresh cycles vary by grade: 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade).
• Interface  Parallel SDRAM interface with LVTTL-compatible signals; random column address every clock cycle.
• Power  Single power supply operation at 3.3 V (specified 3.0 V to 3.6 V range).
• Package & Temperature  90‑ball TF‑BGA (8 × 13) package; specified operating temperature range −40 °C to +85 °C (TA).
• Operational Commands  Supports burst read/write, burst read/single write, burst termination by burst stop and precharge commands, and internal bank architecture for row access/precharge hiding.

Typical Applications

• Synchronous memory subsystems  Implementation as high-speed SDRAM in systems that require a parallel synchronous DRAM interface and programmable burst behavior.
• Embedded digital systems  Use where a 128 Mbit volatile SDRAM with selectable CAS latency and self/auto refresh is required for temporary data storage.
• Board-level memory integration  Integration into designs that need a compact 90‑TFBGA DRAM package operating from a 3.3 V supply and supporting industrial temperature ranges.

Unique Advantages

• Selectable high-speed timing: 166 MHz clock option with low access time (5.4 ns at CL=3) enables support for faster synchronous data paths.
• Flexible burst control: Programmable burst lengths and sequence options simplify system memory access patterns and burst optimization.
• Power supply compatibility: Single 3.3 V supply (3.0–3.6 V range) matches common 3.3 V memory systems for straightforward integration.
• Compact package footprint: 90‑TFBGA (8×13) package reduces PCB area for dense board designs.
• Robust refresh options: Auto Refresh and Self Refresh with defined refresh cycle modes across device grades provide predictable data retention behavior.
• Programmable timing trade-offs: CAS latency selectable between 2 and 3 clocks to balance frequency and access time requirements.

Why Choose IS42S32400E-6BLI?

The IS42S32400E-6BLI positions itself as a practical 128 Mbit synchronous DRAM option for designs that require a compact, parallel SDRAM device with programmable burst and timing features. Its 4M × 32 organization and internal quad-bank architecture support pipelined, high-speed transfers while the 3.3 V single-supply operation aligns with common memory subsystems.

This device is suitable for engineers specifying board-level SDRAM where selectable CAS latency, managed refresh modes, and a small TF‑BGA footprint are important. The combination of documented timing (including 166 MHz operation and 5.4 ns access time at CL=3 for the ‑6 option) and supported refresh/self-refresh functionality offers predictable behavior for evaluation and integration into synchronous memory designs.

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