IS42S32400E-6BLI-TR

The IS42S32400E-6BLI-TR is a 128 Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture and pipeline access. It implements fully synchronous operation with signals referenced to the rising edge of the clock and is designed for systems requiring high-speed SDRAM memory.

Key capabilities include operation at a 166 MHz clock (CAS latency = 3), a 3.3 V supply range, programmable burst modes and refresh options—making it suitable for designs that need predictable, high-throughput parallel DRAM behavior in a compact 90-TFBGA package.

Key Features

• Memory Core  The device is organized as 4M × 32 (128 Mbit) with internal quad-bank architecture to hide row access and precharge latency.
• Synchronous SDRAM  Fully synchronous operation with all signals referenced to the rising clock edge; clock frequency support includes 166 MHz, 143 MHz and 133 MHz options.
• Timing and Performance  CAS latency programmable to 2 or 3 clocks; for the -6 grade CAS latency = 3 yields a 166 MHz clock and an access time from clock of 5.4 ns.
• Burst and Access Modes  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); supports burst read/write and burst read/single write with burst termination commands.
• Refresh and Self-Refresh  Auto refresh and self-refresh supported; refresh count is 4096 cycles with timing options of 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade) as specified by device grade.
• Interface and Logic Levels  LVTTL interface signaling; random column address capability every clock cycle.
• Power  Single power supply: 3.3 V ± 0.3 V (specified supply range 3.0 V to 3.6 V).
• Package  Supplied in a 90-ball TF-BGA (90-TFBGA, 8×13) package suitable for board-level integration.
• Operating Temperature  Rated for −40°C to +85°C (TA) for industrial-grade operation as provided for this product variant.

Typical Applications

• System Memory Expansion  Used as parallel SDRAM for systems that require synchronous, banked DRAM storage with programmable burst and latency behavior.
• High-Speed Buffering  Serves as a high-throughput buffer where 166 MHz clock operation and burst transfers improve sustained data movement.
• Embedded and Industrial Electronics  Suitable for embedded designs requiring industrial temperature operation (−40°C to +85°C) and standard 3.3 V supply.

Unique Advantages

• High-frequency capability: 166 MHz operation (CAS = 3) supports low-latency access with a 5.4 ns access time from clock for the -6 device grade.
• Flexible burst control: Programmable burst lengths and sequence modes enable efficient data transfer patterns tailored to application needs.
• Quad-bank architecture: Internal bank structure helps hide row access/precharge latency and supports sustained throughput.
• Standard supply and interface: Operates from a 3.3 V supply with LVTTL signaling for straightforward system integration.
• Compact BGA package: 90-TFBGA (8×13) package reduces board footprint while providing a high-pin-count DRAM solution.
• Industrial temperature rating: −40°C to +85°C operation supports deployment in temperature-sensitive environments.

Why Choose IS42S32400E-6BLI-TR?

The IS42S32400E-6BLI-TR combines a 4M × 32 organization and quad-bank synchronous DRAM architecture with programmable burst and refresh features to deliver predictable, high-throughput parallel memory behavior. Its 166 MHz capable timing (CAS = 3) and 5.4 ns access timing (from clock) make it suitable for designs that demand low-latency SDRAM performance.

This device is appropriate for engineers specifying compact, board-level DRAM in industrial-temperature systems powered from a standard 3.3 V supply. The feature set—programmable CAS, burst modes, auto/self-refresh and LVTTL interface—offers configurability for a range of system memory and buffering needs.

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