IS42S32400E-7BLI

The IS42S32400E-7BLI is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture designed for parallel memory interfaces. It operates from a single 3.3 V supply (3.0–3.6 V) and uses a fully synchronous, pipelined architecture with all signals referenced to the rising edge of a positive clock.

Targeted at systems that require parallel SDRAM with programmable timing and refresh control, this device delivers high-speed data transfer at a clock frequency of 143 MHz and supports industrial temperature operation to −40°C to +85°C.

Key Features

• Core / Memory Organization 128 Mbit capacity organized as 4M × 32 with 4 internal banks to improve row access and precharge efficiency.
• Performance Clock frequency: 143 MHz (-7 option) with an access time from clock of 5.4 ns (CAS latency = 3) and programmable CAS latency options (2 or 3 clocks).
• Burst and Access Modes Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave). Supports burst read/write and burst read/single write operations with burst termination.
• Refresh and Self-Refresh Auto Refresh (CBR) and Self Refresh supported; refresh rate options include 4096 refresh cycles per 64 ms for commercial/industrial/A1 grades or 16 ms for A2 grade.
• Interface Parallel memory interface with LVTTL signaling for inputs/controls; random column address every clock cycle.
• Power Single power supply operation: 3.3 V ±0.3 V (3.0–3.6 V).
• Package and Temperature Supplied in a 90‑ball TF‑BGA package (8 × 13) with an operating temperature range of −40°C to +85°C (TA).

Typical Applications

• Embedded systems — Provides 128 Mbit of parallel SDRAM for embedded controllers and modules that require 3.3 V memory and synchronous, low‑latency access.
• Networking and communications equipment — Useful for buffer and packet memory in systems that need predictable burst transfers and programmable CAS latency.
• Industrial controllers — Operates across −40°C to +85°C, making it suitable for industrial environments requiring reliable synchronous DRAM.

Unique Advantages

• Configurable timing — Programmable CAS latency (2 or 3 clocks) and burst options allow designers to tune performance to system timing requirements.
• High throughput — 143 MHz clock rate with pipeline architecture and quad‑bank design enables efficient high‑speed data transfers.
• Flexible burst operation — Multiple burst lengths and sequence modes simplify implementation of sequential and interleaved access patterns.
• Robust refresh support — Auto Refresh and Self Refresh modes with defined refresh schemes reduce design complexity for maintaining data integrity.
• Industry‑grade temperature range — Specified operation from −40°C to +85°C for deployment in temperature‑sensitive applications.
• Compact BGA packaging — 90‑ball TF‑BGA (8×13) package provides a compact footprint for space‑constrained board layouts.

Why Choose IS42S32400E-7BLI?

The IS42S32400E-7BLI combines 128 Mbit of synchronous, parallel DRAM with programmable access timing and burst control to meet designs that require predictable, high‑speed memory behavior. Its single 3.3 V supply, LVTTL interface, and quad‑bank pipeline architecture make it suitable for systems that need deterministic memory performance and flexible access modes.

With support for Auto Refresh, Self Refresh, and an industrial operating temperature range, this device is appropriate for designers seeking a reliable SDRAM building block for embedded, networking, and industrial applications where 4M × 32 organization and 90‑TFBGA packaging align with board and system constraints.

Request a quote or contact sales to discuss pricing, availability, and how IS42S32400E-7BLI can fit into your design requirements.