IS42S32400F-6B
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 1,535 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32400F-6B – IC DRAM 128Mbit Parallel SDRAM, 90‑TFBGA
The IS42S32400F-6B is a 128 Mbit volatile DRAM organized as 4M × 32 using SDRAM architecture in a 90‑TFBGA (8×13) package. It provides a parallel memory interface with a specified clock frequency of 166 MHz and operates from a 3.0 V to 3.6 V supply.
This device is intended for designs that require external parallel SDRAM memory at 128 Mbit density while operating within a 0°C to 70°C ambient temperature range.
Key Features
- Memory Type & Format Volatile DRAM implemented as SDRAM; memory format specified as DRAM.
- Capacity & Organization 128 Mbit total capacity, organized as 4M × 32 bits for parallel data access.
- Clock Performance Specified clock frequency of 166 MHz for synchronous operation.
- Interface Parallel memory interface for external system memory expansion and buffering.
- Power Supply Operates from a 3.0 V to 3.6 V supply range.
- Package 90‑TFBGA (8×13) package provides a compact BGA form factor for surface mount assembly.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
- Manufacturer Supplied by Integrated Silicon Solution Inc. (ISSI).
Typical Applications
- External memory expansion — Provides 128 Mbit parallel SDRAM capacity for systems requiring additional volatile memory.
- Parallel data buffering — Suited for designs that need a parallel SDRAM interface operating at up to 166 MHz clock frequency.
- Commercial and industrial equipment — Applicable in equipment operating within the specified 0°C to 70°C ambient range.
Unique Advantages
- 128 Mbit density: Compact 128 Mbit capacity organized as 4M × 32 for straightforward parallel memory mapping.
- Synchronous SDRAM architecture: Defined 166 MHz clock frequency enables synchronous operation with parallel memory controllers.
- Wide supply tolerance: 3.0 V to 3.6 V supply range accommodates common 3.3 V system rails.
- Space-efficient BGA package: 90‑TFBGA (8×13) package minimizes board footprint for surface-mount applications.
- Commercial temperature rating: 0°C to 70°C ambient rating for standard commercial deployments.
- Established manufacturer: Produced by Integrated Silicon Solution Inc., providing traceable device sourcing.
Why Choose IS42S32400F-6B?
The IS42S32400F-6B delivers a straightforward, specification-driven solution for designs needing 128 Mbit of parallel SDRAM in a compact 90‑TFBGA package. Its 4M × 32 organization, 166 MHz clock frequency, and 3.0 V–3.6 V supply make it suitable for systems that require synchronous parallel memory with defined electrical and thermal operating ranges.
This device is appropriate for engineers and procurement teams specifying external DRAM for commercial and industrial equipment that operate within the provided temperature and voltage envelopes, offering predictable integration into parallel memory subsystems.
Request a quote or contact sales to discuss availability, pricing, and lead times for the IS42S32400F-6B.
