IS42S32400F-6BLI

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 676 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400F-6BLI – IC DRAM 128MBIT PAR 90TFBGA

The IS42S32400F-6BLI is a 128 Mbit volatile DRAM device implemented as SDRAM with a parallel memory interface. It is organized as 4M × 32 and is supplied in a 90-TFBGA (8×13) package.

This device targets designs that require a parallel 128 Mbit SDRAM operating at a 166 MHz clock rate with a supply voltage range of 3.0 V to 3.6 V and an ambient operating range from −40°C to 85°C.

Key Features

  • Memory Core  SDRAM technology with a memory size of 128 Mbit organized as 4M × 32 for parallel data transactions.
  • Performance  Specified clock frequency of 166 MHz and an access time of 5.4 ns to support high-speed parallel memory access.
  • Interface  Parallel memory interface suitable for systems designed to use parallel DRAM devices.
  • Power  Operates from a 3.0 V to 3.6 V supply range to match common 3 V memory power domains.
  • Package  90-TFBGA package supplied as 90-TFBGA (8×13) for board-level mounting.
  • Operating Range  Rated for ambient temperatures from −40°C to 85°C (TA).
  • Volatile Memory  DRAM format intended for temporary data storage in active systems.

Typical Applications

  • Systems requiring parallel DRAM  Used where a 128 Mbit SDRAM with a parallel interface is needed for system memory expansion or buffering.
  • High-speed data buffering  Suited for designs that require a 166 MHz clock and 5.4 ns access time for rapid read/write cycles.
  • 3 V memory domains  Applicable in designs that operate within a 3.0 V to 3.6 V supply window.

Unique Advantages

  • Parallel interface compatibility: Direct support for parallel memory architectures simplifies integration with parallel memory controllers.
  • Defined performance characteristics: 166 MHz clock frequency and 5.4 ns access time provide clear timing expectations for system designers.
  • Wide operating temperature range: −40°C to 85°C (TA) covers extended ambient conditions for many embedded applications.
  • Standard power range: 3.0 V to 3.6 V operation aligns with common 3 V system power rails.
  • Compact BGA package: Supplied in a 90-TFBGA (8×13) package suitable for space-constrained PCB layouts.

Why Choose IS42S32400F-6BLI?

The IS42S32400F-6BLI provides a straightforward 128 Mbit SDRAM solution for designs that require a parallel memory interface, defined timing (166 MHz clock, 5.4 ns access), and operation across a standard 3.0 V–3.6 V supply. Its 4M × 32 organization and 90-TFBGA (8×13) package make it suitable for systems that need compact, high-speed volatile storage within a −40°C to 85°C ambient range.

This device is appropriate for engineers and procurement teams specifying parallel DRAM for embedded systems or other designs where the listed electrical, timing, and package characteristics match system requirements.

Request a quote or contact sales for pricing and availability of IS42S32400F-6BLI.

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