IS42S32400F-6TLI
| Part Description |
IC DRAM 128MBIT PAR 86TSOP II |
|---|---|
| Quantity | 1,199 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32400F-6TLI – IC DRAM 128MBIT PAR 86TSOP II
The IS42S32400F-6TLI is a 128‑Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with a parallel memory interface. It operates at a clock frequency of 166 MHz with an access time of 5.4 ns, and is specified for a supply voltage range of 3.0 V to 3.6 V.
Packaged in an 86‑TSOP II (0.400", 10.16 mm width) and rated for operation from −40°C to 85°C (TA), this device is intended for systems requiring parallel SDRAM density and defined timing characteristics.
Key Features
- Memory Type and Organization Volatile SDRAM organized as 4M × 32, providing 128 Mbit total memory capacity.
- Performance Supports a clock frequency of 166 MHz and an access time of 5.4 ns for synchronous parallel memory operations.
- Voltage Supply Operates across a supply voltage range of 3.0 V to 3.6 V.
- Package Available in an 86‑TSOP II package (86‑TFSOP, 0.400" / 10.16 mm width) suitable for surface-mount assembly.
- Operating Temperature Specified for ambient temperatures from −40°C to 85°C (TA).
- Interface Parallel memory interface for direct integration into systems using parallel SDRAM buses.
Typical Applications
- Embedded systems requiring parallel SDRAM — Provides 128 Mbit of parallel SDRAM memory organized as 4M × 32 for system memory expansion and buffering.
- Data buffering and frame storage — Parallel interface and 166 MHz clocking support time-deterministic memory accesses for buffer implementations.
- Industrial and commercial electronics — Package and temperature range accommodate designs operating from −40°C to 85°C.
Unique Advantages
- Defined memory density: 128 Mbit capacity arranged as 4M × 32 simplifies memory mapping and address planning.
- Synchronous operation at 166 MHz: Provides a specified clock frequency and a 5.4 ns access time for predictable timing in parallel-memory designs.
- Wide supply tolerance: 3.0 V to 3.6 V supply range supports nominal 3 V system voltages.
- Robust temperature range: −40°C to 85°C ambient rating supports deployment in temperature-challenged environments.
- Compact surface-mount package: 86‑TSOP II (0.400", 10.16 mm width) enables high-density board layouts.
Why Choose IC DRAM 128MBIT PAR 86TSOP II?
The IS42S32400F-6TLI delivers a clear specification set for designs that need 128 Mbit of parallel SDRAM with defined timing (5.4 ns access) and clocking (166 MHz). Its 4M × 32 organization, 3.0–3.6 V supply range, and industrial temperature rating make it suitable for systems where predictable memory behavior and environmental range are required.
This device is appropriate for engineers and procurement teams specifying parallel SDRAM capacity in compact TSOP II packages who require straightforward electrical and mechanical characteristics for integration and long-term support in production designs.
Request a quote or submit an inquiry to obtain pricing and availability for the IS42S32400F-6TLI.
