IS42S32400F-6TLI-TR

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 680 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400F-6TLI-TR – 128 Mbit SDRAM, 86‑TSOP II

The IS42S32400F-6TLI-TR is a 128 Mbit volatile DRAM organized as 4M × 32 using SDRAM technology. It provides parallel memory interface operation with a 166 MHz clock capability and a 5.4 ns access time.

Designed for designs that require compact board-level memory, the device is supplied in an 86‑TSOP II (0.400", 10.16 mm width) package and supports a 3.0 V to 3.6 V supply range and an operating temperature range of −40 °C to 85 °C. Manufacturer: ISSI, Integrated Silicon Solution Inc.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 4M × 32 for 32‑bit wide parallel data paths.
  • Performance Supports a 166 MHz clock frequency with an access time of 5.4 ns for responsive read/write operations.
  • Interface Parallel memory interface compatible with standard SDRAM timing and control schemes.
  • Power Operates from a 3.0 V to 3.6 V supply range to match common 3 V system rails.
  • Package 86‑TSOP II package (0.400", 10.16 mm width) for compact PCB footprint and board-level mounting.
  • Temperature Range Rated for operation from −40 °C to 85 °C (TA) for use in temperature‑varied environments.

Typical Applications

  • System Memory for Parallel‑Bus Designs Provides temporary data storage in systems that require a 32‑bit parallel SDRAM interface.
  • Frame Buffer and Graphics Memory 4M × 32 organization supports wide‑bus buffering for display or pixel data storage.
  • Industrial and Embedded Equipment Suitable where a compact TSOP II package and −40 °C to 85 °C operating range are required.

Unique Advantages

  • 32‑bit Wide Organization: 4M × 32 layout enables wider data paths to reduce transaction counts for parallel systems.
  • High Clock Rate: 166 MHz clock capability supports higher throughput for time‑sensitive memory operations.
  • Fast Access Time: 5.4 ns access time contributes to lower latency in read/write cycles.
  • Wide Operating Voltage: 3.0 V to 3.6 V supply compatibility with standard 3 V system rails simplifies power sequencing.
  • Compact TSOP II Package: 86‑TSOP II (0.400", 10.16 mm) balances density and ease of PCB placement for space‑constrained designs.
  • Extended Temperature Capability: −40 °C to 85 °C rating supports deployment in thermally demanding environments.

Why Choose IS42S32400F-6TLI-TR?

The IS42S32400F-6TLI-TR positions itself as a practical SDRAM option for designs that demand a 128 Mbit parallel memory solution with a 32‑bit data path, high clock capability, and fast access performance. Its compact 86‑TSOP II package and support for a 3.0 V–3.6 V supply make it suitable for board‑level integration where footprint and standard power rails matter.

Engineers specifying this ISSI device benefit from a component that aligns measurable specs—clock frequency, access time, voltage range, and operating temperature—with system requirements for reliable, mid‑density volatile memory in embedded and industrial applications.

Request a quote or contact sales to discuss pricing and availability for the IS42S32400F-6TLI-TR.

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