IS42S32400F-7BL
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 995 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32400F-7BL – 128 Mbit SDRAM, 90-TFBGA
The IS42S32400F-7BL from ISSI (Integrated Silicon Solution Inc) is a 128 Mbit volatile SDRAM organized as 4M × 32 with a parallel memory interface. It is packaged in a 90-TFBGA (8×13) footprint and is designed for systems operating from a 3.0 V to 3.6 V supply with an ambient temperature range of 0 °C to 70 °C.
This device supports synchronous DRAM operation with a clock frequency up to 143 MHz and an access time of 5.4 ns, providing a defined timing profile for designs that require parallel DRAM memory.
Key Features
- Memory Architecture 128 Mbit DRAM organized as 4M × 32, providing parallel-access memory storage.
- Technology SDRAM (synchronous DRAM) memory format.
- Performance Supports clock frequencies up to 143 MHz with an access time of 5.4 ns for consistent timing characteristics.
- Power Operates from a 3.0 V to 3.6 V supply voltage range.
- Package 90-TFBGA package (8 × 13 mm) for high pin density in a compact BGA footprint.
- Operating Temperature Rated for ambient operation from 0 °C to 70 °C (TA).
- Memory Interface Parallel memory interface suitable for direct connection to parallel DRAM buses.
- Volatile Memory Designed as volatile DRAM for temporary system memory use.
Typical Applications
- Parallel memory systems Use as a 128 Mbit parallel SDRAM device where a 4M × 32 organization is required on the system bus.
- Embedded platforms Provides SDRAM for embedded boards that accept a 90-TFBGA (8×13) package and run from a 3.0 V–3.6 V supply.
- SDRAM interface designs Suitable for designs operating up to 143 MHz clock frequency with a 5.4 ns access time requirement.
Unique Advantages
- Deterministic access timing: 5.4 ns access time and support to 143 MHz clock provide predictable memory timing for system designers.
- Direct parallel interface: Parallel memory interface simplifies integration into systems using parallel DRAM buses.
- Flexible supply range: 3.0 V to 3.6 V operation aligns with common 3 V system rails.
- Compact BGA package: 90-TFBGA (8×13) offers a compact, high-density package option for space-constrained PCBs.
- Standard SDRAM format: Synchronous DRAM technology for designs built around SDRAM protocols.
Why Choose IC DRAM 128MBIT PAR 90TFBGA?
The IS42S32400F-7BL delivers a clear specification set—128 Mbit capacity in a 4M × 32 organization, SDRAM technology, 143 MHz clock support, and a 5.4 ns access time—packaged in a 90-TFBGA (8×13) footprint. These measurable attributes make it suitable for designs that require defined timing, a parallel memory interface, and operation from 3.0 V to 3.6 V within a 0 °C to 70 °C ambient range.
Manufactured by ISSI, this device is appropriate for engineers and procurement teams seeking a parallel SDRAM component with compact packaging and documented electrical and timing parameters for integration into system memory subsystems.
Request a quote or submit a sales inquiry to obtain pricing, availability, and lead-time information for the IS42S32400F-7BL.
