IS42S32400F-7BLI

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 470 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400F-7BLI – 128 Mbit SDRAM, 90‑TFBGA

The IS42S32400F-7BLI is a 128 Mbit volatile SDRAM organized as 4M × 32, delivered in a 90‑TFBGA (8×13) package. It provides a parallel memory interface with a rated clock frequency of 143 MHz and an access time of 5.4 ns.

This device is intended for systems that require external parallel SDRAM storage within a 3.0 V to 3.6 V supply range and operation across an extended ambient temperature range of −40°C to 85°C (TA).

Key Features

  • Memory Type: Volatile SDRAM — standard dynamic RAM architecture for external system memory.
  • Density & Organization: 128 Mbit, organized as 4M × 32 — supports 32‑bit wide data paths for parallel memory systems.
  • Performance: 143 MHz clock frequency with 5.4 ns access time — suitable for designs targeting this timing envelope.
  • Interface: Parallel memory interface — designed for direct connection to parallel SDRAM controllers.
  • Voltage Supply: 3.0 V to 3.6 V operation — compatible with standard 3 V SDRAM power rails.
  • Package: 90‑TFBGA (8×13) — compact ball grid array footprint for surface mounting.
  • Operating Temperature: −40°C to 85°C (TA) — supports extended ambient temperature operation.

Typical Applications

  • Parallel SDRAM memory subsystems — used where a 128 Mbit parallel SDRAM block with 4M × 32 organization is required.
  • Board-level external system memory — suitable for designs that integrate an external SDRAM device operating at 143 MHz clock rates.
  • Temperature-sensitive deployments — applicable to systems requiring operation across −40°C to 85°C ambient temperatures.

Unique Advantages

  • Clear density and organization: 128 Mbit arranged as 4M × 32 simplifies integration into 32‑bit parallel memory buses.
  • Defined performance envelope: 143 MHz clock and 5.4 ns access time provide explicit timing targets for system design and validation.
  • Standard 3 V supply compatibility: Operates from 3.0 V to 3.6 V, matching common SDRAM power rails and simplifying power-supply design.
  • Compact BGA package: 90‑TFBGA (8×13) offers a space-efficient mounting option for high-density boards.
  • Extended temperature range: −40°C to 85°C (TA) supports deployments across a broad ambient range without additional qualification notes in the product data.

Why Choose IS42S32400F-7BLI?

The IS42S32400F-7BLI positions itself as a straightforward 128 Mbit parallel SDRAM component with defined electrical and timing characteristics. Its 4M × 32 organization, 143 MHz clock rating, and 5.4 ns access time make it suitable for designs that require a known-performance external SDRAM device on a 32‑bit data bus.

Engineers and procurement teams seeking a compact 90‑TFBGA package with 3.0 V–3.6 V operation and an extended −40°C to 85°C ambient range can consider this device for board-level memory implementations where those explicit specifications meet system requirements.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S32400F-7BLI.

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