IS42S32400F-7BLI
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 470 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32400F-7BLI – 128 Mbit SDRAM, 90‑TFBGA
The IS42S32400F-7BLI is a 128 Mbit volatile SDRAM organized as 4M × 32, delivered in a 90‑TFBGA (8×13) package. It provides a parallel memory interface with a rated clock frequency of 143 MHz and an access time of 5.4 ns.
This device is intended for systems that require external parallel SDRAM storage within a 3.0 V to 3.6 V supply range and operation across an extended ambient temperature range of −40°C to 85°C (TA).
Key Features
- Memory Type: Volatile SDRAM — standard dynamic RAM architecture for external system memory.
- Density & Organization: 128 Mbit, organized as 4M × 32 — supports 32‑bit wide data paths for parallel memory systems.
- Performance: 143 MHz clock frequency with 5.4 ns access time — suitable for designs targeting this timing envelope.
- Interface: Parallel memory interface — designed for direct connection to parallel SDRAM controllers.
- Voltage Supply: 3.0 V to 3.6 V operation — compatible with standard 3 V SDRAM power rails.
- Package: 90‑TFBGA (8×13) — compact ball grid array footprint for surface mounting.
- Operating Temperature: −40°C to 85°C (TA) — supports extended ambient temperature operation.
Typical Applications
- Parallel SDRAM memory subsystems — used where a 128 Mbit parallel SDRAM block with 4M × 32 organization is required.
- Board-level external system memory — suitable for designs that integrate an external SDRAM device operating at 143 MHz clock rates.
- Temperature-sensitive deployments — applicable to systems requiring operation across −40°C to 85°C ambient temperatures.
Unique Advantages
- Clear density and organization: 128 Mbit arranged as 4M × 32 simplifies integration into 32‑bit parallel memory buses.
- Defined performance envelope: 143 MHz clock and 5.4 ns access time provide explicit timing targets for system design and validation.
- Standard 3 V supply compatibility: Operates from 3.0 V to 3.6 V, matching common SDRAM power rails and simplifying power-supply design.
- Compact BGA package: 90‑TFBGA (8×13) offers a space-efficient mounting option for high-density boards.
- Extended temperature range: −40°C to 85°C (TA) supports deployments across a broad ambient range without additional qualification notes in the product data.
Why Choose IS42S32400F-7BLI?
The IS42S32400F-7BLI positions itself as a straightforward 128 Mbit parallel SDRAM component with defined electrical and timing characteristics. Its 4M × 32 organization, 143 MHz clock rating, and 5.4 ns access time make it suitable for designs that require a known-performance external SDRAM device on a 32‑bit data bus.
Engineers and procurement teams seeking a compact 90‑TFBGA package with 3.0 V–3.6 V operation and an extended −40°C to 85°C ambient range can consider this device for board-level memory implementations where those explicit specifications meet system requirements.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S32400F-7BLI.