IS42S32400F-7BI

The IS42S32400F-7BI is a volatile SDRAM device providing 128 Mbit of parallel memory organized as 4M × 32. It implements a synchronous DRAM architecture with a 143 MHz clock specification, suitable for systems that require parallel SDRAM memory density in a compact BGA package.

Key device characteristics include a 3.0–3.6 V supply range, industrial operating temperature from -40°C to 85°C (TA), and a 90‑TFBGA (8×13) package for high‑density board integration.

Key Features

• Memory Architecture Organized as 4M × 32 for a total capacity of 128 Mbit, providing parallel data width suitable for bus-oriented memory designs.
• SDRAM Technology Synchronous DRAM operation with a specified clock frequency of 143 MHz for timed, bus-synchronous access.
• Voltage Supply Operates from 3.0 V to 3.6 V, enabling compatibility with systems using standard 3 V SDRAM supply rails.
• Package Supplied in a 90‑TFBGA (8×13) package to support compact board footprints and high I/O density.
• Operating Temperature Rated for -40°C to 85°C (TA), supporting deployment across a range of ambient conditions.
• Interface Parallel memory interface optimized for designs requiring synchronous parallel DRAM connectivity.

Typical Applications

• Embedded Systems Provides parallel SDRAM capacity for embedded controllers and processors that require external synchronous memory.
• Consumer Electronics Used where a 128 Mbit parallel SDRAM device is needed to buffer or store data in compact, board-level designs.
• Industrial Equipment Suitable for industrial applications that require memory operation across -40°C to 85°C ambient temperatures.

Unique Advantages

• Parallel SDRAM Organization: The 4M × 32 arrangement delivers a 32-bit wide parallel interface for bus-oriented memory integration.
• Specified Clock Performance: A 143 MHz clock rating provides a defined synchronous operating point for timing-sensitive designs.
• Standard 3 V Supply Range: 3.0–3.6 V operation aligns with common system power rails for straightforward power management.
• Compact BGA Package: The 90‑TFBGA (8×13) package enables high-density placement and reduced board area compared to larger form factors.
• Wide Temperature Range: Rated from -40°C to 85°C (TA) for use in environments with varying ambient conditions.

Why Choose IC DRAM 128MBIT PAR 90TFBGA?

The IS42S32400F-7BI positions itself as a practical parallel SDRAM option where a 128 Mbit capacity, 32-bit data width, and synchronous operation at 143 MHz are required. Its 3.0–3.6 V supply range and industrial temperature rating make it suitable for designs that need predictable memory behavior across standard operating conditions.

Engineers specifying this device benefit from a compact 90‑TFBGA package for dense board layouts and a straightforward parallel interface for integration into systems that rely on external SDRAM. The IS42S32400F-7BI is appropriate for projects seeking a verifiable, specification-driven memory component for embedded, consumer, or industrial applications.

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