IS42S32400F-7B

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 1,564 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess TimeN/AGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400F-7B – 128 Mbit SDRAM, Parallel Interface, 90-TFBGA

The IS42S32400F-7B is a 128 Mbit volatile SDRAM device organized as 4M × 32 with a parallel memory interface. It provides a single-package memory solution in a 90-TFBGA (8 × 13) footprint for surface-mount applications.

Designed for systems that require parallel SDRAM capacity and defined timing, the device operates at a clock frequency of 143 MHz and supports a supply voltage range of 3.0 V to 3.6 V with an operating ambient temperature range of 0°C to 70°C.

Key Features

  • Memory Core – SDRAM Volatile SDRAM technology organized as 4M × 32 delivering 128 Mbit of memory capacity.
  • Performance Specified clock frequency of 143 MHz for timing and system integration.
  • Interface Parallel memory interface for direct connection to parallel memory buses and controllers.
  • Power Supply voltage range from 3.0 V to 3.6 V to match standard 3 V SDRAM supply rails.
  • Package 90-TFBGA (8 × 13) BGA package providing a compact surface-mount footprint.
  • Operating Range Commercial ambient temperature rating of 0°C to 70°C (TA).

Typical Applications

  • Parallel memory subsystems Use as 128 Mbit parallel SDRAM where organized 4M × 32 memory is required.
  • Buffering and working memory Suitable for designs that require a defined 143 MHz SDRAM clock for data buffering and temporary storage.
  • Compact surface-mount designs 90-TFBGA (8 × 13) package for applications needing a space-efficient BGA footprint.

Unique Advantages

  • 128 Mbit density: Single-device 4M × 32 organization simplifies board-level memory capacity planning.
  • Defined timing: 143 MHz clock frequency provides predictable timing for memory scheduling and integration.
  • 3 V supply compatibility: 3.0 V to 3.6 V operating range aligns with common 3 V SDRAM power rails.
  • Compact BGA footprint: 90-TFBGA (8 × 13) package enables space-efficient surface-mount placement.
  • Commercial temperature rating: Specified 0°C to 70°C operating ambient range for standard commercial deployments.

Why Choose IC DRAM 128MBIT PAR 90TFBGA?

The IS42S32400F-7B combines a 128 Mbit SDRAM capacity with a parallel interface and a compact 90-TFBGA package, offering a straightforward memory option for designs that require defined timing and a 32-bit data organization. Its 143 MHz clock specification, 3.0 V to 3.6 V supply range, and 0°C to 70°C operating range provide clear, verifiable parameters for system integration.

This device is suited to engineers and procurement teams specifying parallel SDRAM in board-level designs where a known-density, known-timing memory component in a compact BGA footprint is required.

Request a quote or submit a sales inquiry to get pricing and availability for the IS42S32400F-7B.

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