IS42S32400F-6TL

The IS42S32400F-6TL is a 128 Mbit volatile DRAM organized as 4M × 32 using SDRAM technology with a parallel memory interface. It delivers synchronous parallel memory access with a rated clock frequency of 166 MHz and an access time of 5.4 ns.

Offered in an 86‑TFSOP (86‑TSOP II) package, the device operates from a 3.0 V to 3.6 V supply and is specified for an ambient operating temperature range of 0°C to 70°C, making it suitable for designs that require a compact, parallel SDRAM solution with defined electrical and timing characteristics.

Key Features

• Memory Architecture 128 Mbit DRAM organized as 4M × 32, providing a 32‑bit parallel data path.
• SDRAM Technology Synchronous DRAM interface with parallel operation for deterministic timing and burst transfers at rated clock speed.
• Performance Rated clock frequency of 166 MHz and an access time of 5.4 ns for timing-sensitive memory operations.
• Power Single supply operation from 3.0 V to 3.6 V to match common 3 V memory power domains.
• Package Supplied in an 86‑TFSOP (86‑TSOP II) package with a 0.400" (10.16 mm) body width for compact board-level integration.
• Environmental Rating Specified operating ambient temperature range of 0°C to 70°C (TA).
• Interface Parallel memory interface compatible with 32‑bit wide data buses (4M × 32 organization).

Typical Applications

• Parallel Memory Systems — Provides 128 Mbit of synchronous parallel storage where a 32‑bit data path is required for system memory buffering.
• Frame and Line Buffers — Can be used where defined access time (5.4 ns) and 166 MHz clock operation support deterministic frame or line buffering needs.
• Embedded and Board-Level Designs — Fits compact board layouts that require a 86‑TSOP II package and a 3.0 V–3.6 V supply domain.

Unique Advantages

• High-density 128 Mbit capacity: Supports substantial parallel storage in a single device with a 4M × 32 organization.
• Deterministic synchronous performance: 166 MHz clock rating and 5.4 ns access time enable consistent timing for synchronous memory operations.
• 3.0 V to 3.6 V supply range: Matches common 3 V memory power rails for straightforward power integration.
• Compact TSOP II package: 86‑TFSOP (0.400", 10.16 mm) footprint helps conserve PCB area while providing a 32‑bit parallel interface.
• Defined operating temperature: Specified for 0°C to 70°C ambient operation for predictable performance within that range.

Why Choose IS42S32400F-6TL?

The IS42S32400F-6TL delivers a straightforward, high-density parallel SDRAM option with clear electrical and timing specifications—128 Mbit capacity, 4M × 32 organization, 166 MHz clock, 5.4 ns access time, and 3.0 V–3.6 V supply. Its 86‑TSOP II package provides a compact footprint for board-level integration while maintaining a 32‑bit parallel interface.

This device is well suited to designs that require defined synchronous memory performance and a compact form factor. Engineers specifying parallel SDRAM where capacity, timing, voltage range, and package dimensions must be explicit will find these documented attributes useful for system-level planning and integration.

To request pricing, availability, or a formal quote for the IS42S32400F-6TL, please submit a quote request or inquiry referencing the part number and your project requirements.