IS42S32400F-6BL

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 1,241 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400F-6BL – IC DRAM 128MBIT PAR 90TFBGA

The IS42S32400F-6BL is a 128 Mbit parallel SDRAM device organized as 4M × 32, providing volatile off-chip memory for systems that require high-throughput buffering and working storage. Built as a synchronous DRAM (SDRAM) in a compact 90‑TFBGA (8×13) package, it targets applications that need a standard 3.0–3.6 V supply and commercial temperature operation.

Key Features

  • Memory  128 Mbit capacity organized as 4M × 32, delivering a wide 32‑bit data path for parallel system architectures.
  • Technology  SDRAM (synchronous dynamic RAM) providing standard DRAM functionality for system memory and buffering.
  • Performance  166 MHz clock frequency with a 5.4 ns access time to support fast data transfer and low-latency access patterns.
  • Power  Operates from a 3.0 V to 3.6 V supply range compatible with standard 3 V SDRAM systems.
  • Interface  Parallel memory interface suitable for designs that require synchronous parallel access to external DRAM.
  • Package  90‑TFBGA (8×13) BGA package offering a compact footprint for board-level integration.
  • Temperature Range  Commercial operating temperature range of 0 °C to 70 °C (TA).

Typical Applications

  • Embedded systems  Provides volatile working memory for devices that require parallel SDRAM buffering and program data storage.
  • Consumer electronics  Suited for products needing off-chip SDRAM for temporary data storage and frame buffering.
  • Networking and communications  Can be used for packet buffering or temporary data queues in systems employing parallel memory interfaces.

Unique Advantages

  • Wide 32‑bit organization: The 4M × 32 memory layout supports broad data paths, reducing the number of cycles required for wide-word transfers.
  • High-clock operation: 166 MHz clock frequency combined with 5.4 ns access time enables responsive memory access for performance-sensitive tasks.
  • Standard 3 V supply compatibility: 3.0–3.6 V operating range aligns with common system power rails for straightforward integration.
  • Compact BGA package: 90‑TFBGA (8×13) package minimizes board area while providing the necessary pinout for parallel SDRAM connections.
  • Commercial temperature suitability: Rated for 0 °C to 70 °C operation for general-purpose and consumer-grade applications.

Why Choose IS42S32400F-6BL?

The IS42S32400F-6BL delivers a focused combination of capacity, parallel 32‑bit organization, and synchronous DRAM performance in a compact 90‑TFBGA package. Its 166 MHz clock capability and 5.4 ns access time make it appropriate for designs that require deterministic, high-throughput volatile memory with standard 3 V power support.

This device is well suited to designers and procurement teams building commercial-level embedded systems, consumer electronics, and networking equipment that need reliable off-chip SDRAM for buffering and working storage while maintaining a small PCB footprint.

Request a quote or contact sales to discuss availability, pricing, and volume options for the IS42S32400F-6BL.

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