IS42S32400F-6BI
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 195 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32400F-6BI – IC DRAM 128MBIT PAR 90TFBGA
The IS42S32400F-6BI from Integrated Silicon Solution Inc is a 128 Mbit volatile DRAM organized as 4M × 32 using SDRAM architecture with a parallel memory interface. It operates with a clock frequency up to 166 MHz and is intended for system designs that require conventional parallel SDRAM memory capacity and timing performance.
This device supports operation over a supply range of 3.0 V to 3.6 V and a temperature range of −40°C to 85°C, and is supplied in a 90-TFBGA (8×13) package for board-level mounting.
Key Features
- Memory Type Volatile SDRAM configured as 128 Mbit (4M × 32) for general-purpose system memory.
- Performance Supports a clock frequency of 166 MHz to meet timing requirements of parallel SDRAM interfaces.
- Interface Parallel memory interface compatible with standard SDRAM bus architectures.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package Supplied in a 90-TFBGA package (8×13) suitable for BGA board mounting.
- Operating Temperature Rated for −40°C to 85°C (TA) to support a wide range of ambient conditions.
Typical Applications
- Embedded system memory — Provides 128 Mbit of parallel SDRAM for general-purpose data storage in system designs that require volatile working memory.
- Buffering and data processing — Serves as a parallel SDRAM buffer for designs requiring 4M × 32 organization and 166 MHz clock operation.
- Board-level memory expansion — Fits designs needing a 90-TFBGA mounted DRAM device operating from 3.0 V to 3.6 V across −40°C to 85°C.
Unique Advantages
- Standard SDRAM architecture: 4M × 32 organization provides a predictable memory structure for parallel SDRAM systems.
- 166 MHz clock support: Enables designs that require synchronous operation at that clock rate.
- Wide supply range: 3.0 V to 3.6 V operation accommodates common 3 V system rails.
- Extended temperature operation: Rated −40°C to 85°C for use across a broad range of ambient conditions.
- 90-TFBGA (8×13) package: BGA-style package format for compact board-level mounting and standard assembly processes.
Why Choose IS42S32400F-6BI?
The IS42S32400F-6BI delivers 128 Mbit of parallel SDRAM capacity with a 4M × 32 organization and 166 MHz clock capability in a 90-TFBGA package. Its 3.0 V–3.6 V supply range and −40°C to 85°C operating window make it suitable for designs that require conventional SDRAM performance and reliable board-level integration.
This device is well suited to engineers and procurement teams specifying a straightforward, verifiable parallel SDRAM option for systems that require this capacity and electrical/thermal envelope without additional qualification claims.
Request a quote or submit a pricing and availability inquiry for the IS42S32400F-6BI to obtain lead-time and quantity information.
