IS42S32400F-6BLI-TR

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 271 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400F-6BLI-TR – IC DRAM 128MBIT PAR 90TFBGA

The IS42S32400F-6BLI-TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 4M × 32 with a parallel memory interface. It operates at a clock frequency of 166 MHz with a 5.4 ns access time, providing deterministic, high-speed volatile storage for systems that require parallel SDRAM memory.

Packaged in a compact 90‑TFBGA (8 × 13) with a supply voltage range of 3.0 V to 3.6 V and an operating temperature range of −40 °C to 85 °C, this device is suited to designs that need a mid-density SDRAM component with defined timing and power characteristics.

Key Features

  • Memory Type & Architecture 128 Mbit SDRAM organized as 4M × 32, providing a parallel memory configuration for systems requiring word-oriented access.
  • Performance Clock frequency specified at 166 MHz and an access time of 5.4 ns for synchronous operation and predictable timing behavior.
  • Supply Voltage Operates from 3.0 V to 3.6 V, allowing compatibility with 3 V-class system power rails.
  • Package 90‑TFBGA (8 × 13) ball grid array package for compact board-level integration.
  • Temperature Range Industrial operating range from −40 °C to 85 °C (TA) for use in temperature-variable environments.
  • Interface Parallel memory interface suitable for designs that use conventional SDRAM bus architectures.

Unique Advantages

  • Mid-Density Footprint: 128 Mbit capacity provides a balanced memory size for applications that require more than low-density DRAM but less than high-density solutions.
  • Synchronous Timing: 166 MHz clock and 5.4 ns access time enable deterministic, synchronous operation aligned with system buses and controllers.
  • 3.0–3.6 V Supply Flexibility: Broad supply range supports integration with standard 3 V system power rails.
  • Compact BGA Package: 90‑TFBGA (8 × 13) offers a small board footprint for space-constrained PCB layouts.
  • Wide Operating Temperature: −40 °C to 85 °C rating supports deployment across a range of environmental conditions.

Why Choose IS42S32400F-6BLI-TR?

The IS42S32400F-6BLI-TR is positioned as a straightforward, mid-density SDRAM option for designs that require a parallel 4M × 32 memory organization with defined synchronous timing. Its combination of 128 Mbit capacity, 166 MHz clock rate, and 90‑TFBGA packaging makes it appropriate for system-level integration where compact size, consistent timing, and 3 V-class power are important.

This device is suitable for engineers specifying a volatile SDRAM component with verifiable electrical and thermal ranges; its supply voltage range and operating temperature provide predictable behavior for long-term deployment in supported operating conditions.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S32400F-6BLI-TR.

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