IS42S32400F-6BLI-TR
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 271 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S32400F-6BLI-TR – IC DRAM 128MBIT PAR 90TFBGA
The IS42S32400F-6BLI-TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 4M × 32 with a parallel memory interface. It operates at a clock frequency of 166 MHz with a 5.4 ns access time, providing deterministic, high-speed volatile storage for systems that require parallel SDRAM memory.
Packaged in a compact 90‑TFBGA (8 × 13) with a supply voltage range of 3.0 V to 3.6 V and an operating temperature range of −40 °C to 85 °C, this device is suited to designs that need a mid-density SDRAM component with defined timing and power characteristics.
Key Features
- Memory Type & Architecture 128 Mbit SDRAM organized as 4M × 32, providing a parallel memory configuration for systems requiring word-oriented access.
- Performance Clock frequency specified at 166 MHz and an access time of 5.4 ns for synchronous operation and predictable timing behavior.
- Supply Voltage Operates from 3.0 V to 3.6 V, allowing compatibility with 3 V-class system power rails.
- Package 90‑TFBGA (8 × 13) ball grid array package for compact board-level integration.
- Temperature Range Industrial operating range from −40 °C to 85 °C (TA) for use in temperature-variable environments.
- Interface Parallel memory interface suitable for designs that use conventional SDRAM bus architectures.
Unique Advantages
- Mid-Density Footprint: 128 Mbit capacity provides a balanced memory size for applications that require more than low-density DRAM but less than high-density solutions.
- Synchronous Timing: 166 MHz clock and 5.4 ns access time enable deterministic, synchronous operation aligned with system buses and controllers.
- 3.0–3.6 V Supply Flexibility: Broad supply range supports integration with standard 3 V system power rails.
- Compact BGA Package: 90‑TFBGA (8 × 13) offers a small board footprint for space-constrained PCB layouts.
- Wide Operating Temperature: −40 °C to 85 °C rating supports deployment across a range of environmental conditions.
Why Choose IS42S32400F-6BLI-TR?
The IS42S32400F-6BLI-TR is positioned as a straightforward, mid-density SDRAM option for designs that require a parallel 4M × 32 memory organization with defined synchronous timing. Its combination of 128 Mbit capacity, 166 MHz clock rate, and 90‑TFBGA packaging makes it appropriate for system-level integration where compact size, consistent timing, and 3 V-class power are important.
This device is suitable for engineers specifying a volatile SDRAM component with verifiable electrical and thermal ranges; its supply voltage range and operating temperature provide predictable behavior for long-term deployment in supported operating conditions.
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