IS42S32400E-7TLI-TR

The IS42S32400E-7TLI-TR is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture and pipeline data transfer. It is designed for use in 3.3V synchronous memory systems requiring high-speed, fully synchronous operation referenced to a positive clock edge.

This device targets memory subsystems that need programmable burst operation, selectable CAS latency, and robust timing performance at up to 143 MHz clock frequency, while supporting industrial operating temperatures.

Key Features

• Memory Core  128 Mbit SDRAM organized as 4M × 32 with 4 internal banks to improve row-access efficiency and throughput.
• High-speed Operation  Rated for a clock frequency up to 143 MHz (–7 speed grade) with an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequences (sequential/interleave); CAS latency selectable for 2 or 3 clocks.
• Refresh and Self-Refresh  Supports Auto Refresh and Self Refresh with 4096 refresh cycles per refresh interval (A‑grade options in datasheet).
• Power  Single power supply operation: 3.3 V ±0.3 V (documented supply range 3.0 V to 3.6 V).
• Interface  Parallel SDRAM interface with LVTTL signaling and fully synchronous inputs/outputs referenced to clock rising edge.
• Timing  Key timing parameters available for multiple speed grades; example for –7 grade: 143 MHz clock and 5.4 ns access time at CAS‑3.
• Package and Mounting  Available in an 86‑pin TSOP‑II package (86‑TFSOP, 0.400" / 10.16 mm width) suitable for surface-mount assembly.
• Operating Temperature  Rated for −40°C to +85°C ambient (TA) for industrial operation.

Typical Applications

• Synchronous memory subsystems  Used as a 128 Mb SDRAM device in 3.3 V synchronous memory architectures requiring pipeline high-speed transfers.
• Burst-buffer and data buffering  Suitable where programmable burst lengths and burst read/write operations are required for burst-intensive data handling.
• Industrial temperature systems  Designed for applications needing operation across −40°C to +85°C ambient conditions.

Unique Advantages

• Flexible timing options: Selectable CAS latency (2 or 3 clocks) and multiple speed grades allow designers to match latency and frequency to system requirements.
• Programmable burst control: Burst lengths and sequence modes (sequential/interleave) provide control over data transfer patterns for optimized throughput.
• Quad-bank architecture: Internal banking hides row access/precharge latency, improving effective bandwidth for interleaved access patterns.
• Standardized 86‑TSOP II package: Compact 86‑pin TSOP‑II form factor (10.16 mm width) for surface-mount designs with established board-level handling.
• Wide operating range: Single‑supply 3.3 V operation (3.0–3.6 V) and industrial temperature rating support a range of system environments.
• Comprehensive timing data: Datasheet provides detailed timing and refresh options (including Auto and Self Refresh) to support deterministic memory system design.

Why Choose IS42S32400E-7TLI-TR?

The IS42S32400E-7TLI-TR combines a 128 Mb SDRAM density with a quad-bank, fully synchronous pipeline architecture to deliver configurable performance for 3.3 V memory systems. Its programmable burst modes, selectable CAS latencies, and documented timing parameters make it suitable for designs that require clear control over transfer patterns and latency.

With an industrial temperature rating and a standard 86‑pin TSOP‑II package, this device is appropriate for engineers specifying a compact, high-speed SDRAM for systems operating across a broad ambient range. Manufacturer documentation includes full electrical and timing details to support integration and validation in production designs.

Please request a quote or contact sales to discuss availability, lead times and volume pricing for the IS42S32400E-7TLI-TR.