IS45S16400J-7TLA1-TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 706 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16400J-7TLA1-TR – IC DRAM 64MBIT PAR 54TSOP II
The IS45S16400J-7TLA1-TR is a 64 Mbit volatile SDRAM device from ISSI (Integrated Silicon Solution Inc.), organized as 4M × 16 and implemented with a parallel memory interface. It is supplied in a 54‑lead TSOP II package (0.400", 10.16 mm width) and operates from a 3.0 V to 3.6 V supply.
Designed for applications that require compact, high-speed DRAM, this device delivers a clock frequency up to 143 MHz and an access time of 5.4 ns while supporting industrial temperature operation from −40 °C to 85 °C.
Key Features
- Memory Core SDRAM architecture organized as 4M × 16 for a total memory capacity of 64 Mbit.
- Performance Clock frequency up to 143 MHz and an access time of 5.4 ns for high‑speed read/write operations.
- Interface Parallel memory interface compatible with systems requiring standard DRAM parallel access.
- Power Operates from a nominal voltage range of 3.0 V to 3.6 V.
- Package 54‑lead TSOP II package (0.400" / 10.16 mm width) for space‑efficient board mounting.
- Operating Temperature Specified operating ambient range of −40 °C to 85 °C (TA) for extended temperature environments.
Unique Advantages
- Compact, industry-standard package: 54‑TSOP II footprint enables dense board layouts while preserving a parallel DRAM pinout.
- Fast access and clock rate: 5.4 ns access time with up to 143 MHz operation supports high‑throughput memory transactions.
- Moderate-voltage operation: 3.0 V to 3.6 V supply range aligns with common 3 V system rails.
- Clear density and organization: 64 Mbit capacity in a 4M × 16 configuration simplifies capacity planning and bus design.
- Wide ambient temperature range: −40 °C to 85 °C supports deployment in environments with variable thermal conditions.
Why Choose IS45S16400J-7TLA1-TR?
The IS45S16400J-7TLA1-TR provides a straightforward, high-speed parallel SDRAM option in a compact TSOP II package. Its combination of 64 Mbit density, 4M × 16 organization, 143 MHz clock capability and 5.4 ns access time delivers measurable performance in designs that require fast volatile memory at standard 3 V supply levels.
This device is suitable for engineers and procurement teams seeking a reliable SDRAM component with defined electrical and thermal specifications, enabling predictable integration into systems that require parallel DRAM memory with a known footprint and operating range.
If you need pricing, lead‑time or availability, request a quote or submit an inquiry to receive detailed commercial information and support for the IS45S16400J-7TLA1-TR.
