IS45S16400J-7TLA1

The IS45S16400J-7TLA1 is a 64 Mbit volatile DRAM implemented as synchronous DRAM (SDRAM) with a parallel memory interface. It is organized as 4M × 16 and delivers predictable memory timing for systems that require parallel SDRAM capacity in a compact package.

Key attributes include a 143 MHz clock rating with a 5.4 ns access time, a 3.0 V to 3.6 V supply range, and an operating ambient temperature range of −40°C to 85°C, providing defined electrical and environmental operating points for system design.

Key Features

• Memory Core 64 Mbit DRAM, organized as 4M × 16 in SDRAM architecture for parallel memory operations.
• Performance Clock frequency rated at 143 MHz with an access time of 5.4 ns for memory transactions.
• Interface Parallel memory interface suitable for direct connection to parallel memory controllers.
• Power Supply voltage range of 3.0 V to 3.6 V compatible with standard 3.3 V system rails.
• Package 54‑lead TSOP II package (0.400", 10.16 mm width) specified as the supplier device package.
• Operating Temperature Specified operating ambient range of −40°C to 85°C (TA) for extended temperature applications.
• Memory Format Volatile DRAM format intended for temporary data storage in active systems.

Unique Advantages

• Compact 54‑TSOP II footprint: The 54‑lead TSOP II package provides a space-efficient form factor for board-level designs.
• Defined timing performance: 143 MHz clock rating and 5.4 ns access time give deterministic memory timing for system integration and timing budgets.
• Parallel interface simplicity: 4M × 16 SDRAM organization supports straightforward interfacing to parallel memory controllers.
• Standard 3.3 V compatibility: 3.0–3.6 V supply range aligns with common 3.3 V system supplies.
• Extended operating range: −40°C to 85°C ambient rating supports use across a broad set of environmental conditions.

Why Choose IS45S16400J-7TLA1?

The IS45S16400J-7TLA1 is positioned for designs that need a compact, parallel SDRAM solution with clearly specified timing, voltage, and temperature characteristics. Its 4M × 16 organization and 64 Mbit capacity make it suitable where moderate-density volatile storage is required in a 54‑lead TSOP II package.

With documented clock, access-time, supply-voltage, and ambient-temperature specifications, this device provides deterministic electrical and environmental parameters that support repeatable integration into embedded and system-level memory subsystems.

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