IS45S16400J-7TLA2-TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 632 Available (as of May 19, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-7TLA2-TR – IC DRAM 64MBIT PAR 54TSOP II

The IS45S16400J-7TLA2-TR is a 64 Mbit volatile DRAM organized as 4M × 16 and implemented as SDRAM with a parallel memory interface. It provides external DRAM capacity in a 54‑TSOP II package for designs that require parallel-access dynamic memory.

With support for a 3.0 V to 3.6 V supply, a clock frequency up to 143 MHz and an access time of 5.4 ns, this device targets systems that need compact, board‑mounted DRAM in a standardized TSOP form factor.

Key Features

  • Memory Type & Architecture Volatile DRAM in SDRAM architecture; organized as 4M × 16 for a total capacity of 64 Mbit.
  • Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns, enabling parallel SDRAM operation at specified timing.
  • Interface Parallel memory interface suitable for systems requiring external DRAM connectivity.
  • Voltage Supply Operates from 3.0 V to 3.6 V, matching common 3 V SDRAM supply rails.
  • Package Supplied in a 54‑lead TSOP II package (0.400", 10.16 mm width) for board mounting where space and standard TSOP footprint are required.
  • Temperature Range Rated for operation from −40 °C to 105 °C (TA), supporting extended ambient temperature environments.

Typical Applications

  • Embedded memory expansion — Provides 64 Mbit of external SDRAM storage for systems that require parallel DRAM capacity in a compact TSOP package.
  • Board‑level DRAM implementation — Suitable for designs that need a 4M × 16 SDRAM device with documented clock and access timing.
  • Industrial and extended‑temperature systems — The −40 °C to 105 °C operating range supports deployment in systems exposed to wider ambient temperatures.

Unique Advantages

  • Clear capacity and organization: 64 Mbit total memory organized as 4M × 16 makes mapping and memory planning straightforward for parallel SDRAM designs.
  • Defined timing and speed: 143 MHz clock support and 5.4 ns access time provide measurable performance parameters for system timing budgets.
  • Standard TSOP II package: 54‑lead TSOP (0.400", 10.16 mm width) simplifies footprint selection and assembly for board designs using TSOP components.
  • Wide operating voltage range: 3.0 V to 3.6 V supply compatibility allows integration with common 3 V SDRAM power rails.
  • Extended temperature capability: −40 °C to 105 °C rating supports use in designs that require broader ambient temperature tolerance.

Why Choose IS45S16400J-7TLA2-TR?

The IS45S16400J-7TLA2-TR delivers a clearly specified 64 Mbit SDRAM solution with parallel interface, defined timing (143 MHz clock, 5.4 ns access), and a standard 54‑TSOP II package. These documented characteristics make it a practical choice for engineers implementing external DRAM in space‑constrained board layouts that require deterministic memory performance.

This device is suited to designs and teams that prioritize predictable electrical and thermal behavior—its supply voltage range and −40 °C to 105 °C operating window help ensure consistent operation across a variety of board‑level applications.

Request a quote or contact sales to discuss availability, pricing, and lead time for the IS45S16400J-7TLA2-TR.

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