IS45S32800L-6BLA1-TR

The IS45S32800L-6BLA1-TR from ISSI is a 256 Mbit volatile SDRAM device organized as 8M × 32. It implements synchronous DRAM architecture with a 166 MHz clock frequency and is intended for use in automotive-grade electronic systems.

Qualified to AEC-Q100 and specified for an operating temperature range of −40°C to +85°C (TA), this part targets embedded designs that require automotive-level qualification, compact BGA packaging, and a 32-bit memory interface.

Key Features

• Memory Core & Organization 256 Mbit SDRAM organized as 8M × 32 bits, providing a straightforward 32-bit data bus memory configuration for system integration.
• Performance Synchronous DRAM operation with a 166 MHz clock frequency and a typical access time of 5.4 ns, supporting time-critical buffer and working-memory functions.
• Interface & Logic Levels LVTTL memory interface signaling for compatibility with common 3.3 V logic domains.
• Power Supply Single-supply operation from 3.0 V to 3.6 V, matching standard 3.3 V system rails.
• Automotive Qualification & Temperature Range AEC-Q100 qualified and specified for −40°C to +85°C ambient operation, suitable for automotive electronic environments.
• Package 90-ball TFBGA package (8 × 13 mm) for compact PCB footprint and high-density board layouts.
• Volatile DRAM Format Standard volatile DRAM behavior appropriate for system memory, buffering, and temporary storage applications.

Typical Applications

• Automotive electronic modules — Memory for ECUs and control modules where AEC-Q100 qualification and −40°C to +85°C operation are required.
• Embedded system buffers — Working memory and data buffering in embedded designs that use a 32-bit data bus.
• Instrument clusters and displays — Temporary frame and data storage in automotive display and instrument subsystems.

Unique Advantages

• AEC-Q100 qualification: Explicit automotive qualification supports use in designs that require supplier-specified automotive grading.
• 32-bit organization: 8M × 32 architecture simplifies integration into 32-bit memory buses without additional multiplexing.
• 166 MHz synchronous operation: Higher clock rate and 5.4 ns access time provide the timing needed for responsive buffering and working memory.
• Wide supply tolerance: 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails for straightforward power integration.
• Compact BGA package: 90-TFBGA (8 × 13 mm) offers a dense footprint suited to space-constrained PCB designs.

Why Choose IS45S32800L-6BLA1-TR?

The IS45S32800L-6BLA1-TR positions itself as a purpose-built automotive SDRAM device combining synchronous DRAM performance with supplier-declared AEC-Q100 qualification and a −40°C to +85°C operating range. Its 256 Mbit capacity and 8M × 32 organization deliver a clear integration path for 32-bit embedded memory architectures.

This device is appropriate for designers and procurement teams specifying automotive-grade working memory for control modules, display systems, and embedded buffers where compact packaging, 3.3 V compatibility, and validated automotive qualification are important selection criteria.

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