IS45S32800L-7BLA1
| Part Description |
AUTOMOTIVE (-40 TO +85C), 256M, |
|---|---|
| Quantity | 554 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 8M x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | N/A | HTS Code | N/A |
Overview of IS45S32800L-7BLA1 – Automotive SDRAM 256 Mbit (‑40 to +85°C)
The IS45S32800L-7BLA1 is a 256 Mbit volatile SDRAM organized as 8M × 32, designed for automotive-grade applications. It provides a synchronous DRAM architecture with a 143 MHz clock frequency and AEC‑Q100 qualification for use across a broad operating temperature range.
This device targets systems that require mid-density, high-speed volatile memory in a compact 90‑TFBGA (8×13) package with a 3.0 V to 3.6 V supply and LVTTL-compatible interface signaling.
Key Features
- Memory Core 256 Mbit SDRAM organized as 8M × 32 (DRAM volatile memory).
- Performance Supports a 143 MHz clock frequency with a 5.4 ns access time for responsive read/write cycles.
- Interface and Signaling LVTTL memory interface compatible with 3.0 V to 3.6 V supply rails.
- Automotive Qualification AEC‑Q100 qualification and an operating temperature range of ‑40 °C to +85 °C for automotive-grade reliability.
- Package 90‑TFBGA package (8×13) for space-efficient surface mounting.
- Memory Format Synchronous DRAM (SDRAM) volatile memory suitable for buffering and system memory functions.
Typical Applications
- Automotive electronic modules — Memory expansion and buffering in systems requiring AEC‑Q100 qualification and operation between ‑40 °C and +85 °C.
- Embedded control systems — Mid-density volatile storage for devices needing 8M × 32 organization and LVTTL signaling at 3.0–3.6 V.
- Data buffering and temporary storage — High-speed SDRAM capacity with 143 MHz clocking and 5.4 ns access time for transient data handling.
Unique Advantages
- AEC‑Q100 qualified: Provides an automotive-qualified memory option for designs that require established component-level automotive qualification.
- Temperature-tolerant operation: Rated for ‑40 °C to +85 °C, enabling deployment across a wide range of environmental conditions.
- Compact BGA footprint: 90‑TFBGA (8×13) package minimizes PCB area while supporting surface-mount assembly.
- Broad supply range: Operates from 3.0 V to 3.6 V to suit systems with standard 3 V supply domains.
- Synchronous SDRAM performance: 143 MHz clock and 5.4 ns access time deliver responsive volatile memory for system buffering needs.
Why Choose AUTOMOTIVE (-40 TO +85C), 256M,
The IS45S32800L-7BLA1 combines AEC‑Q100 qualification, a wide operating temperature range, and a compact 90‑TFBGA package to meet the needs of automotive and embedded designs that require reliable mid-density SDRAM. Its 8M × 32 organization, 143 MHz clock capability, and LVTTL-compatible interface make it suitable for applications demanding responsive volatile memory and straightforward integration into 3.0 V–3.6 V systems.
This device is appropriate for engineers specifying automotive-grade SDRAM for memory buffering and temporary data storage where qualification, temperature performance, and package density are priority selection criteria.
Request a quote or contact sales to discuss availability, lead times, and volume pricing for the IS45S32800L-7BLA1.
