IS46DR16160B-25DBLA1
| Part Description |
IC DRAM 256MBIT PAR 84TWBGA |
|---|---|
| Quantity | 136 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 400 ps | Grade | Industrial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS46DR16160B-25DBLA1 - 256Mbit DDR2 SDRAM
The IS46DR16160B-25DBLA1 is a 256-megabit synchronous dynamic random access memory (SDRAM) device built on DDR2 technology. Organized as 16M x 16, this parallel-interface DRAM provides high-speed data access with a 400MHz clock frequency and 0.4ns access time. Ideal for embedded systems, industrial equipment, and data buffering applications requiring reliable volatile memory with extended temperature tolerance.
Key Features
- Memory Configuration - 256Mbit total capacity organized as 16 million words by 16 bits, optimized for parallel data access patterns.
- DDR2 SDRAM Technology - Double data rate architecture operating at 400MHz clock frequency delivers high throughput for demanding applications.
- Fast Access Time - 0.4ns (400ps) access time with 15ns write cycle time ensures responsive memory operations.
- Industrial Temperature Range - Qualified for -40°C to 85°C ambient operation, suitable for harsh industrial and automotive environments.
- Compact Package - 84-pin TWBGA (Thin Very Fine Ball Grid Array) package measuring 8mm x 12.5mm minimizes board space requirements.
- Standard Voltage Operation - 1.7V to 1.9V supply voltage range compatible with common embedded system power rails.
Typical Applications
- Industrial Automation - Provides reliable memory buffering for programmable logic controllers (PLCs) and human-machine interfaces where extended temperature tolerance ensures consistent operation in factory floor environments.
- Embedded Computing Systems - Serves as main system memory or cache for embedded processors in applications requiring moderate capacity with fast parallel access, such as network appliances and industrial computers.
- Data Acquisition and Test Equipment - Buffers high-speed measurement data in oscilloscopes, logic analyzers, and sensor systems where the 400MHz operation matches data collection rates.
- Communications Infrastructure - Functions as packet buffer memory in routers, switches, and telecom equipment where the parallel interface integrates directly with FPGA and ASIC designs.
- Medical Instrumentation - Stores imaging data and processing buffers in diagnostic equipment operating across wide temperature ranges typical of medical device deployment.
Unique Advantages
- Extended Temperature Reliability: The -40°C to 85°C operating range eliminates the need for temperature-controlled enclosures in industrial deployments, reducing system complexity and cost.
- Parallel Interface Efficiency: Direct parallel connection to processors and FPGAs simplifies board design compared to serial memory interfaces, reducing component count and routing complexity.
- Proven DDR2 Ecosystem: Leverages mature DDR2 controller IP and design tools, accelerating development cycles and reducing integration risk compared to newer memory technologies.
- Space-Efficient Footprint: The 8mm x 12.5mm TWBGA package provides high density memory in a compact form factor, valuable for space-constrained embedded designs.
- Standard Voltage Compatibility: 1.7V to 1.9V operation integrates seamlessly with common embedded processor I/O voltage levels without requiring dedicated voltage regulators.
- Active Lifecycle Status: Current production availability ensures long-term supply continuity for products with multi-year deployment cycles.
Why Choose IS46DR16160B-25DBLA1?
This DDR2 SDRAM is engineered for embedded and industrial applications where proven technology, extended temperature operation, and parallel interface efficiency are priorities. The 256Mbit capacity and 16-bit organization strike an optimal balance for systems requiring moderate memory density without the complexity of larger DRAM devices. Engineers select this component when design predictability, industrial temperature qualification, and compact packaging are essential to product success.
For applications where DDR2 SDRAM meets performance requirements, the IS46DR16160B-25DBLA1 offers a cost-effective, reliable memory solution with the supply stability needed for long product lifecycles.
Contact Our Team
Request a quote for the IS46DR16160B-25DBLA1 or discuss your memory requirements with our technical sales team. We provide pricing, availability information, and application support to help you integrate this DRAM into your design.
