IS46DR16160B-25DBLA1-TR
| Part Description |
IC DRAM 256MBIT PAR 84TWBGA |
|---|---|
| Quantity | 268 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 400 ps | Grade | Industrial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS46DR16160B-25DBLA1-TR – IC DRAM 256MBIT PAR 84TWBGA
The IS46DR16160B-25DBLA1-TR is a 256 Mbit volatile DDR2 SDRAM organized as 16M × 16 with a parallel memory interface. It implements DDR2 SDRAM architecture optimized for board-level memory applications that require a 1.7 V–1.9 V supply and a compact BGA footprint.
With a 400 MHz clock frequency, 400 ps access time and a 15 ns write cycle time (word page), this device targets designs needing predictable DDR2 performance across an extended temperature range of −40°C to 85°C (TA).
Key Features
- Memory Core 256 Mbit DRAM organized as 16M × 16 providing a parallel DDR2 memory architecture.
- Technology & Interface DDR2 SDRAM technology with a parallel memory interface suitable for standard DDR2 signaling.
- Performance 400 MHz clock frequency and 400 ps access time deliver the timing characteristics associated with DDR2 operation; write cycle time (word page) is 15 ns.
- Power Operates from a 1.7 V to 1.9 V supply range.
- Package Supplied in an 84-ball BGA package (listed as 84-TFBGA and supplier device package 84-TWBGA (8×12.5)), providing a compact board footprint.
- Operating Conditions Specified operating temperature range of −40°C to 85°C (TA).
Typical Applications
- Board-level parallel memory — Provides 256 Mbit DDR2 SDRAM capacity in a compact 84-ball BGA for systems that require a parallel DDR2 interface.
- Embedded system memory — Suitable where a 16M × 16 DDR2 memory organization and 1.7 V–1.9 V operation are required.
- Industrial operating environments — Rated for −40°C to 85°C to meet temperature demands of many industrial designs.
Unique Advantages
- DDR2 performance profile: 400 MHz clock and 400 ps access time align the device with DDR2 timing requirements for predictable system memory behavior.
- Compact BGA footprint: 84-ball BGA (84-TFBGA / 84-TWBGA (8×12.5)) minimizes PCB area for space-constrained designs.
- Wide operating temperature: −40°C to 85°C rating supports deployment in extended-temperature applications.
- Low-voltage operation: 1.7 V–1.9 V supply range supports low-voltage DDR2 system designs.
- Parallel memory organization: 16M × 16 arrangement simplifies integration where a parallel DRAM interface is required.
Why Choose IS46DR16160B-25DBLA1-TR?
The IS46DR16160B-25DBLA1-TR is positioned for designs that require a compact, parallel DDR2 SDRAM solution offering defined timing characteristics, low-voltage operation and an extended operating temperature range. Its 16M × 16 organization and 84-ball BGA package make it appropriate for board-level memory implementations where PCB space and predictable DDR2 behavior matter.
This device suits engineers and procurement teams needing a 256 Mbit DDR2 memory component with clear electrical and thermal specifications for reliable system integration.
If you would like pricing, availability or a formal quote for IS46DR16160B-25DBLA1-TR, submit a request for a quote or contact sales to discuss requirements and lead times.
