IS46DR16160B-3DBLA1-TR
| Part Description |
IC DRAM 256MBIT PAR 84TWBGA |
|---|---|
| Quantity | 220 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 450 ps | Grade | Industrial | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS46DR16160B-3DBLA1-TR – IC DRAM 256MBIT PAR 84TWBGA
The IS46DR16160B-3DBLA1-TR from ISSI is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel memory interface. It delivers DDR2-class operation with a 333 MHz clock frequency, low-voltage supply range, and a compact BGA package for board-level memory integration.
This device is suited to systems that require volatile DDR2 parallel DRAM implemented in a space-efficient 84‑TWBGA package and that operate across a wide temperature range.
Key Features
- Memory Core and Capacity 256 Mbit DRAM organized as 16M × 16, providing a standard parallel memory topology.
- DDR2 SDRAM Technology SDRAM DDR2 architecture with a parallel interface for conventional DRAM system integration.
- Performance 333 MHz clock frequency with 450 ps access time and a write cycle time (word/page) of 15 ns.
- Power Low-voltage operation with a supply range of 1.7 V to 1.9 V.
- Package and Mounting 84‑TWBGA package (8 × 12.5 mm) for compact board-level mounting.
- Operating Temperature Specified operating range of −40 °C to 85 °C (TA).
- Memory Type Volatile DRAM suitable for standard working memory applications.
Typical Applications
- Embedded Systems — Board-level DDR2 memory for processors and controllers that require 256 Mbit parallel DRAM resources.
- Consumer and Industrial Electronics — Low-voltage DDR2 memory for devices operating across −40 °C to 85 °C.
- Memory Modules and Subsystems — Integration into memory subsystems where 16M × 16 organization and BGA mounting are required.
Unique Advantages
- Compact BGA Footprint: The 84‑TWBGA (8 × 12.5 mm) package minimizes PCB area for dense board designs.
- Low-Voltage DDR2 Operation: 1.7 V–1.9 V supply range enables compatibility with low-voltage DDR2 power domains.
- High-Speed Access: 333 MHz clock and 450 ps access time support fast memory transactions and tight timing budgets.
- Broad Temperature Range: Rated for −40 °C to 85 °C, allowing deployment across a wide set of environmental conditions.
- Standard Parallel Interface: 16M × 16 organization and parallel DRAM interface simplify integration into conventional memory architectures.
Why Choose IS46DR16160B-3DBLA1-TR?
The IS46DR16160B-3DBLA1-TR provides a compact, low-voltage DDR2 memory option with a 256 Mbit capacity and performance characteristics suited to board-level DRAM implementations. Its combination of 333 MHz operation, 450 ps access time, and 84‑TWBGA packaging addresses designs that need standard parallel DRAM in a space-efficient form factor.
Manufactured by ISSI, this device is appropriate for designers seeking a straightforward DDR2 SDRAM building block for embedded, consumer, and industrial applications where the specified voltage range and −40 °C to 85 °C operating range match system requirements.
Request a quote or contact sales to discuss pricing, availability, and lead times for the IS46DR16160B-3DBLA1-TR.
