IS46R86400F-6TLA1-TR

The IS46R86400F-6TLA1-TR is a 512 Mbit volatile DRAM organized as 64M × 8 using DDR (SDRAM - DDR) architecture. It offers a 166 MHz clock frequency and an SSTL_2 memory interface suitable for designs requiring synchronous double-data-rate memory.

Engineered with an AEC-Q100 qualification and a -40°C to 85°C operating range, this device targets applications that require automotive-grade qualification and reliable operation across a wide temperature span while maintaining compact packaging in a 66‑TSOP II form factor.

Key Features

• Memory Core 512 Mbit DRAM organized as 64M × 8 for byte-wide memory applications.
• DDR SDRAM Technology SDRAM - DDR architecture providing double-data-rate operation with a 166 MHz clock frequency.
• Performance 700 ps access time and a write cycle time (word page) of 15 ns for predictable timing characteristics.
• Interface & Signaling SSTL_2 memory interface for systems that require SSTL_2 signaling.
• Power Nominal supply range of 2.3 V to 2.7 V to support low-voltage DDR memory designs.
• Reliability & Qualification AEC-Q100 qualified and specified for operation from -40°C to 85°C (TA), indicating suitability for automotive-grade designs.
• Package & Mounting 66‑TSOP II (66‑TSSOP, 0.400" / 10.16 mm width) package for board-level space optimization and standard surface-mount assembly.

Typical Applications

• Automotive systems — AEC-Q100 qualification and automotive grade labeling make this DDR SDRAM suitable for in-vehicle memory buffering and data storage where automotive qualification is required.
• Industrial and embedded equipment — The -40°C to 85°C operating range and low-voltage operation support embedded controllers and industrial modules operating across extended temperature ranges.
• High-reliability electronics — Predictable access and cycle timing (700 ps access time, 15 ns write cycle time) benefit designs that require deterministic memory performance.

Unique Advantages

• AEC-Q100 qualified: Provides documented qualification for automotive environments as indicated in the product data.
• DDR performance: 166 MHz clock frequency with DDR architecture and 700 ps access time for double-data-rate operation.
• SSTL_2 signaling: Built with an SSTL_2 memory interface to match systems designed for SSTL_2-compatible memory signaling.
• Low-voltage operation: 2.3 V to 2.7 V supply range reduces system power budget compared to higher-voltage memories.
• Compact TSOP package: 66‑TSOP II package (0.400", 10.16 mm width) balances board space and assembly convenience for surface-mount designs.

Why Choose IS46R86400F-6TLA1-TR?

The IS46R86400F-6TLA1-TR combines DDR SDRAM performance with automotive-grade qualification and a compact 66‑TSOP II package. Its 166 MHz clocking, SSTL_2 interface, and documented timing characteristics (700 ps access time, 15 ns write cycle time) make it a clear option for designs that require deterministic memory behavior within temperature-sensitive or qualification-driven environments.

This device is well suited to engineers specifying memory for automotive, industrial, or other embedded systems where AEC-Q100 qualification, low-voltage operation, and compact board-level footprint are important considerations.

Request a quote or submit a pricing inquiry for the IS46R86400F-6TLA1-TR to check availability, lead times, and ordering options for your design.