JSD12324PA

512 Mbit Mobile LPDDR SDRAM Die
Part Description

512 Mbit Mobile LPDDR SDRAM Die

Quantity 897 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device PackageDieMemory FormatRAMTechnologySDRAM - Mobile LPDDR
Memory Size512 MbitAccess Time5 nsGradeExtended
Clock Frequency200 MHzVoltage1.7~1.95VMemory TypeVolatile
Operating Temperature-30°C - 85°CMounting MethodSurface MountMemory InterfaceLPDDR
Memory Organizationx32Moisture Sensitivity Level1RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.28

Overview of JSD12324PA – 512 Mbit Mobile LPDDR SDRAM Die

The JSD12324PA is a 512 Mbit volatile memory device implemented as Mobile LPDDR SDRAM. It delivers x32 organization and an LPDDR memory interface tailored for designs that require compact, high-density volatile memory.

With a 200 MHz clock frequency, 5 ns access time rating and a 1.7–1.95 V supply range, this die-form LPDDR component targets applications where low-voltage LPDDR memory integration and extended temperature operation are important.

Key Features

  • Core / Memory 512 Mbit memory capacity organized as x32, implemented using Mobile LPDDR SDRAM technology.
  • Interface LPDDR memory interface for mobile SDRAM integration.
  • Performance 200 MHz clock frequency with a specified access time of 5 ns for predictable memory access characteristics.
  • Power Low-voltage operation with a supply range of 1.7–1.95 V, supporting LPDDR system power domains.
  • Package & Mounting Supplied as a die with surface mount mounting type information provided for board-level integration planning.
  • Temperature & Grade Extended-grade device rated for operation from −30 °C to 85 °C.
  • Environmental Compliance RoHS compliant.

Typical Applications

  • Mobile and handheld devices — Integration where Mobile LPDDR SDRAM is required for volatile working memory.
  • Memory die integration — Use in custom modules or multi-die assemblies that incorporate LPDDR die-level components.
  • Low-voltage memory subsystems — Designs targeting 1.7–1.95 V power domains and LPDDR interfaces.

Unique Advantages

  • Compact die form factor: Die-level supply enables custom integration into high-density memory assemblies and space-constrained designs.
  • LPDDR compatibility: Mobile LPDDR SDRAM technology and LPDDR interface simplify integration into LPDDR memory subsystems.
  • Low-voltage operation: 1.7–1.95 V supply range supports modern low-power system architectures.
  • Deterministic access performance: 200 MHz clock frequency and 5 ns access time provide clear parameters for memory timing and system design.
  • Extended temperature rating: −30 °C to 85 °C operation supports deployment in environments requiring broader thermal range.
  • Regulatory compliance: RoHS compliance supports assembly and manufacturing environmental requirements.

Why Choose JSD12324PA?

JSD12324PA positions itself as a compact, die-form Mobile LPDDR SDRAM solution offering 512 Mbit capacity with x32 organization and LPDDR interface compatibility. Its combination of low-voltage operation, defined timing characteristics, and extended temperature grade makes it suitable for designs that require LPDDR memory integrated at the die level.

This part is a fit for teams building memory-dense, low-voltage subsystems where predictable access timing, compact integration, and adherence to RoHS are required. The specification set supports scalable designs that rely on LPDDR memory technology and extended-temperature operation.

Request a quote or submit an inquiry to obtain availability, pricing, and packaging details for JSD12324PA.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


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