JSD1G324PA

1 Gbit Mobile LPDDR SDRAM, x32 Die
Part Description

1 Gbit Mobile LPDDR SDRAM, x32 Die

Quantity 850 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device PackageDieMemory FormatRAMTechnologySDRAM - Mobile LPDDR
Memory Size1 GbitAccess Time5 nsGradeN/A
Clock Frequency400 MHzVoltage1.7~1.95VMemory TypeVolatile
Operating TemperatureN/AMounting MethodSurface MountMemory InterfaceLPDDR
Memory Organizationx32Moisture Sensitivity LevelN/ARoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.32

Overview of JSD1G324PA – 1 Gbit Mobile LPDDR SDRAM, x32 Die

The JSD1G324PA is a 1 Gbit volatile memory device implemented as mobile LPDDR SDRAM in a x32 organization. It is supplied as a surface-mount die and operates on an LPDDR memory interface.

With a 400 MHz clock frequency, 5 ns access time and a 1.7–1.95 V supply range, this device targets systems that require low-voltage LPDDR memory with compact packaging and predictable timing characteristics.

Key Features

  • Memory Capacity & Organization 1 Gbit total capacity arranged in an x32 memory organization to support wider data paths where required.
  • Technology & Interface SDRAM implemented as Mobile LPDDR with an LPDDR memory interface for compatibility with LPDDR-based system designs.
  • Performance 400 MHz clock frequency and 5 ns access time provide defined timing characteristics for system memory operations.
  • Power Nominal operating voltage range of 1.7–1.95 V enabling low-voltage operation suitable for power-sensitive designs.
  • Package Surface-mount die format to minimize board footprint and enable integration into compact modules or stacked packages.
  • Compliance RoHS compliant for adherence to common environmental regulations.

Typical Applications

  • Mobile devices Use as LPDDR system memory where low-voltage operation and LPDDR interface compatibility are required.
  • Handheld and portable electronics Provides compact, die-form LPDDR memory for space-constrained designs.
  • Embedded systems Fits designs needing a 1 Gbit volatile memory element with defined timing (5 ns access) and 400 MHz clocking.

Unique Advantages

  • Low-voltage operation: 1.7–1.95 V supply range reduces power draw compared with higher-voltage memories, aiding energy-sensitive designs.
  • Defined performance envelope: 400 MHz clock frequency and 5 ns access time provide predictable performance for memory timing budgets.
  • Wide data bus organization: x32 memory organization supports wider data transfers in a single cycle when integrated appropriately.
  • Compact die format: Surface-mount die reduces component footprint and enables tight integration in compact modules or multi-die assemblies.
  • RoHS compliant: Conforms to RoHS requirements for environmentally regulated applications.

Why Choose JSD1G324PA?

JSD1G324PA positions itself as a focused LPDDR SDRAM option for designs that require a 1 Gbit volatile memory with x32 organization, low-voltage operation, and defined performance characteristics (400 MHz clock, 5 ns access). The surface-mount die format helps conserve board space while enabling integration into compact or multi-die solutions.

Produced by Jeju Semiconductor, this memory device is suitable for engineers and procurement teams specifying LPDDR memory where capacity, predictable timing, and low-voltage operation are primary considerations.

Request a quote or submit an inquiry for JSD1G324PA to receive pricing and availability information.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


    Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH


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