JSD1G324PA
| Part Description |
1 Gbit Mobile LPDDR SDRAM, x32 Die |
|---|---|
| Quantity | 850 Available (as of June 16, 2026) |
| Product Category | DRAM Memory |
|---|---|
| Manufacturer | Jeju Semiconductor Corporation |
| Manufacturing Status | Mass Production |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | RAM | Technology | SDRAM - Mobile LPDDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 5 ns | Grade | N/A | ||
| Clock Frequency | 400 MHz | Voltage | 1.7~1.95V | Memory Type | Volatile | ||
| Operating Temperature | N/A | Mounting Method | Surface Mount | Memory Interface | LPDDR | ||
| Memory Organization | x32 | Moisture Sensitivity Level | N/A | RoHS Compliance | Compliant | ||
| REACH Compliance | REACH Unknown | ECCN | EAR99 | HTS Code | 8542.32.00.32 |
Overview of JSD1G324PA – 1 Gbit Mobile LPDDR SDRAM, x32 Die
The JSD1G324PA is a 1 Gbit volatile memory device implemented as mobile LPDDR SDRAM in a x32 organization. It is supplied as a surface-mount die and operates on an LPDDR memory interface.
With a 400 MHz clock frequency, 5 ns access time and a 1.7–1.95 V supply range, this device targets systems that require low-voltage LPDDR memory with compact packaging and predictable timing characteristics.
Key Features
- Memory Capacity & Organization 1 Gbit total capacity arranged in an x32 memory organization to support wider data paths where required.
- Technology & Interface SDRAM implemented as Mobile LPDDR with an LPDDR memory interface for compatibility with LPDDR-based system designs.
- Performance 400 MHz clock frequency and 5 ns access time provide defined timing characteristics for system memory operations.
- Power Nominal operating voltage range of 1.7–1.95 V enabling low-voltage operation suitable for power-sensitive designs.
- Package Surface-mount die format to minimize board footprint and enable integration into compact modules or stacked packages.
- Compliance RoHS compliant for adherence to common environmental regulations.
Typical Applications
- Mobile devices Use as LPDDR system memory where low-voltage operation and LPDDR interface compatibility are required.
- Handheld and portable electronics Provides compact, die-form LPDDR memory for space-constrained designs.
- Embedded systems Fits designs needing a 1 Gbit volatile memory element with defined timing (5 ns access) and 400 MHz clocking.
Unique Advantages
- Low-voltage operation: 1.7–1.95 V supply range reduces power draw compared with higher-voltage memories, aiding energy-sensitive designs.
- Defined performance envelope: 400 MHz clock frequency and 5 ns access time provide predictable performance for memory timing budgets.
- Wide data bus organization: x32 memory organization supports wider data transfers in a single cycle when integrated appropriately.
- Compact die format: Surface-mount die reduces component footprint and enables tight integration in compact modules or multi-die assemblies.
- RoHS compliant: Conforms to RoHS requirements for environmentally regulated applications.
Why Choose JSD1G324PA?
JSD1G324PA positions itself as a focused LPDDR SDRAM option for designs that require a 1 Gbit volatile memory with x32 organization, low-voltage operation, and defined performance characteristics (400 MHz clock, 5 ns access). The surface-mount die format helps conserve board space while enabling integration into compact or multi-die solutions.
Produced by Jeju Semiconductor, this memory device is suitable for engineers and procurement teams specifying LPDDR memory where capacity, predictable timing, and low-voltage operation are primary considerations.
Request a quote or submit an inquiry for JSD1G324PA to receive pricing and availability information.

Date Founded: 2000
Headquarters: Jeju-si, Jeju-do, Republic of Korea
Employees: 100+
Revenue: $100 Million
Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH