JSL21G168WABQ-25

1Gb LPDDR2 Mobile SDRAM (x16, 400 MHz, Industrial)
Part Description

1Gb LPDDR2 Mobile SDRAM (x16, 400 MHz, Industrial)

Quantity 1,386 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package134-BGA (10.0x11.5mm)Memory FormatRAMTechnologySDRAM - Mobile LPDDR2
Memory Size1 GbitAccess Time18 nsGradeIndustrial
Clock Frequency400 MHzVoltage1.8V/1.2VMemory TypeVolatile
Operating Temperature-40°C - 85°CMounting MethodSurface MountMemory InterfaceLPDDR2
Memory Organizationx16Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.32

Overview of JSL21G168WABQ-25 – 1Gb LPDDR2 Mobile SDRAM (x16, 400 MHz, Industrial)

The JSL21G168WABQ-25 from Jeju Semiconductor is a 1 Gbit volatile mobile LPDDR2 SDRAM organized as x16. It implements a double-data-rate architecture with differential clock and data strobe signaling to support high-rate synchronous memory operations.

Designed for applications that require compact, high-density DRAM in a surface-mount 134-FBGA package (10.0×11.5 mm), this part targets mobile and industrial embedded systems where performance, configurable burst behavior, and extended temperature operation matter.

Key Features

  • Core Architecture  Double-data-rate LPDDR2 architecture with data transfers on both clock edges and bidirectional data strobes (DQS/DQS#) for reliable high-speed operation.
  • Memory Organization & Capacity  1 Gbit density organized as x16 (64M ×16, 8 banks) providing a compact footprint for system memory or buffer applications.
  • Clock & Performance  400 MHz clock frequency (DDR transfers) with selectable burst lengths (4 default, 8 or 16) and burst types (sequential or interleave).
  • Power Domains & Supply  VDD1 / VDD2 / VDDQ rails supported at 1.8V / 1.2V / 1.2V respectively, consistent with LPDDR2 platform requirements.
  • Power Management  Supports Auto Refresh, Self Refresh, Partial Array Self Refresh, Temperature Compensated Self Refresh and Deep Power Down modes for controlled retention and power sequencing.
  • Interface & Controls  Differential clock inputs (CK/CK#), command/address on both CK edges, data and data mask referenced to both edges of DQS; includes data mask (DM) for write operations and configurable drive strength.
  • Internal Architecture  Eight internal banks for concurrent operation and no on-die DLL (CK to DQS is not synchronized); edge-aligned outputs and center-aligned inputs.
  • Package & Mounting  Surface-mount 134-FBGA package, supplier device package 134-BGA (10.0×11.5 mm), suitable for space-constrained board designs.
  • Industrial Grade Temperature  Rated for operation from −40°C to 85°C for industrial environments.
  • Standards & Compatibility  Implements LPDDR2 interface signaling and timing conventions including bidirectional DQS and differential clocks for system-level interoperability.

Typical Applications

  • Mobile and Handheld Devices  High-density LPDDR2 memory suitable for mobile platforms requiring compact, synchronous DRAM.
  • Industrial Embedded Systems  Industrial temperature rating (−40°C to 85°C) makes it appropriate for embedded controllers and instrumentation in harsh environments.
  • Space-Constrained Modules  134-FBGA (10.0×11.5 mm) packaging enables dense memory integration in small form-factor modules and single-board computers.

Unique Advantages

  • High Throughput DDR Operation  DDR architecture at a 400 MHz clock rate enables two data transfers per clock cycle for increased memory bandwidth.
  • Flexible Burst Control  Configurable burst lengths (4, 8, 16) and burst types (sequential/interleave) let designers tune access patterns for system requirements.
  • Comprehensive Power Modes  Auto Refresh, Self Refresh variants and Deep Power Down provide multiple retention and power-saving options to match application power profiles.
  • Industrial Temperature Range  Specified −40°C to 85°C operation supports deployment in temperature-extreme industrial applications.
  • Compact, Surface-Mount Package  134-FBGA (10.0×11.5 mm) package reduces PCB area for compact designs while delivering 1 Gbit density.
  • Robust Signaling  Differential clocking and bidirectional DQS/DQS# strobe support reliable high-speed interface timing and data capture.

Why Choose JSL21G168WABQ-25?

JSL21G168WABQ-25 combines LPDDR2 double-data-rate performance with industrial temperature capability and compact FBGA packaging to address designs that need dense, synchronous SDRAM in constrained spaces. Its supported power modes and configurable burst behavior provide designers flexibility to balance bandwidth and power management.

This device is suited for engineers building mobile-class memory subsystems and industrial embedded platforms that require proven LPDDR2 signaling, a x16 memory organization at 1 Gbit density, and manufacturer-backed datasheet-specified behavior from Jeju Semiconductor.

Request a quote or submit an inquiry for pricing and availability of JSL21G168WABQ-25 to evaluate this LPDDR2 memory for your next design.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


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