JSL22G328WABQ-25AM
| Part Description |
2Gb Mobile LPDDR2 SDRAM (x32, 533 MHz, 134-FBGA) |
|---|---|
| Quantity | 937 Available (as of June 16, 2026) |
| Product Category | DRAM Memory |
|---|---|
| Manufacturer | Jeju Semiconductor Corporation |
| Manufacturing Status | Mass Production |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | 134-BGA (10.0x11.5mm) | Memory Format | RAM | Technology | SDRAM - Mobile LPDDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 533 MHz | Voltage | 1.8V/1.2V | Memory Type | Volatile | ||
| Operating Temperature | -40°C - 105°C | Mounting Method | Surface Mount | Memory Interface | LPDDR2 | ||
| Memory Organization | x32 | Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | ||
| REACH Compliance | REACH Unknown | ECCN | EAR99 | HTS Code | 8542.32.00.36 | ||
| Package / Case | 134-FBGA |
Overview of JSL22G328WABQ-25AM – 2Gb Mobile LPDDR2 SDRAM (x32, 533 MHz, 134-FBGA)
The JSL22G328WABQ-25AM is a 2Gbit mobile LPDDR2 SDRAM device organized as x32. It implements a double-data rate architecture with differential clock and data strobe inputs for high-speed synchronized transfers. This device targets designs that require a compact, surface-mount LPDDR2 memory solution offering 533 MHz clock operation (1,066 Mb/s per pin data rate) and support for advanced low-power modes.
Key Features
- Memory Core Double-data rate LPDDR2 SDRAM architecture supporting two data transfers per clock cycle and 8 internal banks for concurrent operation.
- Performance 533 MHz clock rate delivering 1,066 Mb/s per pin data rate (speed grade −25A with Read Latency 8 / Write Latency 4 as defined in the datasheet).
- Data Path and Timing Differential clock inputs (CK/CK#) and bidirectional differential data strobes (DQS/DQS#); commands and addresses sampled on both clock edges; burst length options 4 (default), 8, or 16 with sequential or interleave burst types.
- Power and Voltage Multi-voltage domains VDD1/VDD2/VDDQ of 1.8V/1.2V/1.2V and support for deep power down, auto refresh, self refresh, and temperature-compensated self refresh modes to minimize active and standby power.
- Write and Read Controls Data mask (DM) for write operations and Auto Precharge option per burst access for efficient memory transactions.
- Drive & I/O Behavior Configurable drive strength, edge-aligned data output and center-aligned data input timing for robust signal capture.
- Package & Mounting 134-FBGA surface-mount package (supplier package 134-BGA, 10.0 × 11.5 mm) suitable for compact board layouts.
- Temperature Range Specified operating temperature from −40 °C to 105 °C for use across broad thermal environments.
Typical Applications
- Mobile and Portable Devices LPDDR2 interface and low-voltage operation make it suitable for onboard memory in mobile and portable electronics requiring high data throughput.
- Embedded Systems Acts as system memory for SoCs and embedded processors that support LPDDR2 x32 interfaces and need compact BGA packaging.
- Low-Power Designs Power-management features like self refresh and deep power down enable lower standby consumption in battery-operated or energy-conscious systems.
Unique Advantages
- High Sustained Bandwidth: 533 MHz operation provides 1,066 Mb/s per pin data throughput for demanding memory transactions.
- Flexible Burst and Bank Structure: Burst length options and 8 internal banks enable efficient access patterns and improved concurrency for multi-threaded memory workloads.
- Multi-Domain Voltages: 1.8V and 1.2V domains offer compatibility with common LPDDR2 power architectures and allow targeted power optimization.
- Advanced Power Modes: Auto Refresh, Self Refresh, Partial Array Self Refresh and Deep Power Down reduce active and idle power usage in duty-cycled applications.
- Compact BGA Footprint: 134-FBGA (10.0 × 11.5 mm) surface-mount package supports space-constrained PCB designs without sacrificing capacity.
- Wide Operating Temperature: −40 °C to 105 °C rating supports deployment across a wide range of thermal environments.
Why Choose JSL22G328WABQ-25AM?
The JSL22G328WABQ-25AM combines LPDDR2 double-data-rate performance with a compact 134-FBGA package and multi-domain voltage support, delivering a balanced solution for designs that need 2 Gbit density with high per-pin throughput. Its configurable drive strength, advanced low-power modes, and flexible burst/bank architecture make it well suited for embedded and portable platforms that implement LPDDR2 interfaces.
Engineers specifying LPDDR2 memory will find this part fits board-level constraints while providing the timing and power-management features necessary for robust system integration and thermal margin across −40 °C to 105 °C operating ranges.
Request a quote or submit an inquiry to receive pricing, availability and additional technical support for the JSL22G328WABQ-25AM.

Date Founded: 2000
Headquarters: Jeju-si, Jeju-do, Republic of Korea
Employees: 100+
Revenue: $100 Million
Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH