JSL22G328WABQ-25AM

2Gb Mobile LPDDR2 SDRAM (x32, 533 MHz, 134-FBGA)
Part Description

2Gb Mobile LPDDR2 SDRAM (x32, 533 MHz, 134-FBGA)

Quantity 937 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package134-BGA (10.0x11.5mm)Memory FormatRAMTechnologySDRAM - Mobile LPDDR2
Memory Size2 GbitAccess TimeN/AGradeAutomotive
Clock Frequency533 MHzVoltage1.8V/1.2VMemory TypeVolatile
Operating Temperature-40°C - 105°CMounting MethodSurface MountMemory InterfaceLPDDR2
Memory Organizationx32Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36
Package / Case134-FBGA

Overview of JSL22G328WABQ-25AM – 2Gb Mobile LPDDR2 SDRAM (x32, 533 MHz, 134-FBGA)

The JSL22G328WABQ-25AM is a 2Gbit mobile LPDDR2 SDRAM device organized as x32. It implements a double-data rate architecture with differential clock and data strobe inputs for high-speed synchronized transfers. This device targets designs that require a compact, surface-mount LPDDR2 memory solution offering 533 MHz clock operation (1,066 Mb/s per pin data rate) and support for advanced low-power modes.

Key Features

  • Memory Core Double-data rate LPDDR2 SDRAM architecture supporting two data transfers per clock cycle and 8 internal banks for concurrent operation.
  • Performance 533 MHz clock rate delivering 1,066 Mb/s per pin data rate (speed grade −25A with Read Latency 8 / Write Latency 4 as defined in the datasheet).
  • Data Path and Timing Differential clock inputs (CK/CK#) and bidirectional differential data strobes (DQS/DQS#); commands and addresses sampled on both clock edges; burst length options 4 (default), 8, or 16 with sequential or interleave burst types.
  • Power and Voltage Multi-voltage domains VDD1/VDD2/VDDQ of 1.8V/1.2V/1.2V and support for deep power down, auto refresh, self refresh, and temperature-compensated self refresh modes to minimize active and standby power.
  • Write and Read Controls Data mask (DM) for write operations and Auto Precharge option per burst access for efficient memory transactions.
  • Drive & I/O Behavior Configurable drive strength, edge-aligned data output and center-aligned data input timing for robust signal capture.
  • Package & Mounting 134-FBGA surface-mount package (supplier package 134-BGA, 10.0 × 11.5 mm) suitable for compact board layouts.
  • Temperature Range Specified operating temperature from −40 °C to 105 °C for use across broad thermal environments.

Typical Applications

  • Mobile and Portable Devices LPDDR2 interface and low-voltage operation make it suitable for onboard memory in mobile and portable electronics requiring high data throughput.
  • Embedded Systems Acts as system memory for SoCs and embedded processors that support LPDDR2 x32 interfaces and need compact BGA packaging.
  • Low-Power Designs Power-management features like self refresh and deep power down enable lower standby consumption in battery-operated or energy-conscious systems.

Unique Advantages

  • High Sustained Bandwidth: 533 MHz operation provides 1,066 Mb/s per pin data throughput for demanding memory transactions.
  • Flexible Burst and Bank Structure: Burst length options and 8 internal banks enable efficient access patterns and improved concurrency for multi-threaded memory workloads.
  • Multi-Domain Voltages: 1.8V and 1.2V domains offer compatibility with common LPDDR2 power architectures and allow targeted power optimization.
  • Advanced Power Modes: Auto Refresh, Self Refresh, Partial Array Self Refresh and Deep Power Down reduce active and idle power usage in duty-cycled applications.
  • Compact BGA Footprint: 134-FBGA (10.0 × 11.5 mm) surface-mount package supports space-constrained PCB designs without sacrificing capacity.
  • Wide Operating Temperature: −40 °C to 105 °C rating supports deployment across a wide range of thermal environments.

Why Choose JSL22G328WABQ-25AM?

The JSL22G328WABQ-25AM combines LPDDR2 double-data-rate performance with a compact 134-FBGA package and multi-domain voltage support, delivering a balanced solution for designs that need 2 Gbit density with high per-pin throughput. Its configurable drive strength, advanced low-power modes, and flexible burst/bank architecture make it well suited for embedded and portable platforms that implement LPDDR2 interfaces.

Engineers specifying LPDDR2 memory will find this part fits board-level constraints while providing the timing and power-management features necessary for robust system integration and thermal margin across −40 °C to 105 °C operating ranges.

Request a quote or submit an inquiry to receive pricing, availability and additional technical support for the JSL22G328WABQ-25AM.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


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    Revenue: $100 Million


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