JSR362G088NHW-A

2Gb DDR3 SDRAM
Part Description

2Gb DDR3 SDRAM

Quantity 1,914 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package78-BGA (7.5x11.0mm)Memory FormatRAMTechnologySDRAM - DDR3
Memory Size2 GbitAccess Time13.09 nsGradeCommercial
Clock Frequency1.066 GHzVoltage1.5VMemory TypeVolatile
Operating Temperature0°C - 85°CMounting MethodSurface MountMemory InterfaceDDR3 SDRAM
Memory Organizationx8Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSR362G088NHW-A – 2Gb DDR3 SDRAM

The JSR362G088NHW-A is a 2 Gbit DDR3 SDRAM device in a 78-ball FBGA package designed for DDR3 memory applications. It implements an 8-bank, x8 organization with a double data-rate architecture and supports data rates up to 2133 MT/s (clock frequency 1.066 GHz).

This memory device targets systems that require high-speed, synchronous DDR3 memory with programmable timing and signal-quality features. It is supplied for commercial-grade applications and is RoHS compliant.

Key Features

  • Density & Organization 2 Gbit density arranged as 256M × 8 (8 banks × 32M words × 8 bits), providing a 1 KB page size for x8 configuration.
  • High Data Rates Supports DDR3 data rates of 1333/1600/1866 and up to 2133 MT/s (clock 1.066 GHz) with corresponding timing grades.
  • Timing and Latency Options CAS Latency (CL) options from 5 up to 14 and CAS Write Latency (CWL) options from 5 to 10; measured access time for the -A speed grade is 13.09 ns.
  • DDR3 Architecture Double data-rate, 8-bit prefetch pipelined architecture with bi-directional differential data strobe (DQS/ /DQS) and differential clock inputs.
  • Signal Integrity & Calibration On-Die Termination (ODT) with synchronous, dynamic and asynchronous modes, ZQ calibration for DQ drive and ODT, and programmable output driver impedance control.
  • Command and Burst Support Burst lengths 8 and 4 (with Burst Chop), sequential and interleave burst types, posted CAS with programmable additive latency, and auto precharge options.
  • Power & Voltage Standard DDR3 voltage operation at VDD/VDDQ = 1.5V (product variant is the DDR3 1.5V -A speed grade); device family includes DDR3L variants but this part is specified for 1.5V operation.
  • Package & Mounting Surface-mount 78-FBGA (78-ball FBGA); supplier package dimensions 7.5 × 11.0 mm.
  • Temperature & Grade Commercial grade device with operating temperature specified as 0 °C to 85 °C.
  • Standards Compliance JEDEC-compliant DDR3 SDRAM and RoHS (lead-free, halogen-free) compliant.

Typical Applications

  • High-speed system memory Use as DDR3 SDRAM in systems that require up to 2133 MT/s throughput at 2 Gbit density.
  • Embedded and computing platforms Suitable where synchronous DDR3 memory with programmable timing and ODT/ZQ calibration is required.
  • Memory expansion and buffering Appropriate for designs needing x8 DDR3 memory organization in a compact 78-FBGA package.

Unique Advantages

  • High throughput capability: Rated up to 2133 MT/s (clock 1.066 GHz) to support high-bandwidth DDR3 system requirements.
  • Flexible timing options: Wide range of CAS and CWL settings enables tuning for system performance and compatibility.
  • Signal-quality features: On-Die Termination, ZQ calibration and programmable driver impedance improve signal integrity in complex board designs.
  • Compact surface-mount package: 78-FBGA (7.5 × 11.0 mm) provides a small footprint for space-constrained layouts.
  • Commercial-grade reliability: Specified operating range of 0 °C to 85 °C and RoHS compliance for mainstream applications.
  • JEDEC compatibility: JEDEC-compliant DDR3 operation and backward compatibility to lower DDR3 data rates for flexible system integration.

Why Choose JSR362G088NHW-A?

The JSR362G088NHW-A delivers a combination of 2 Gbit capacity, high DDR3 data rates (up to 2133 MT/s) and flexible timing controls in a compact 78-FBGA package. Its signal integrity features—ODT, ZQ calibration and programmable driver impedance—help maintain reliable high-speed transfers in DDR3-compatible systems.

This part is well suited for designers and procurement teams seeking a commercial-grade DDR3 SDRAM component with verifiable timing, density and packaging specifications, and RoHS compliance for mainstream memory applications.

Request a quote today to evaluate JSR362G088NHW-A for your next DDR3 memory design or to obtain pricing and availability for volume requirements.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


    Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH


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