JSR362G088NHW
| Part Description |
2Gb DDR3 SDRAM, 78‑FBGA |
|---|---|
| Quantity | 606 Available (as of June 16, 2026) |
| Product Category | DRAM Memory |
|---|---|
| Manufacturer | Jeju Semiconductor Corporation |
| Manufacturing Status | Mass Production |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | 78-BGA (7.5x11.0mm) | Memory Format | RAM | Technology | SDRAM - DDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 13.91 ns | Grade | Commercial | ||
| Clock Frequency | 933 MHz | Voltage | 1.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C - 85°C | Mounting Method | Surface Mount | Memory Interface | DDR3 SDRAM | ||
| Memory Organization | x8 | Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | ||
| REACH Compliance | REACH Unknown | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of JSR362G088NHW – 2Gb DDR3 SDRAM, 78‑FBGA
The JSR362G088NHW is a 2 Gbit DDR3 SDRAM device organized as x8 and offered in a 78‑ball FBGA surface‑mount package (7.5 × 11.0 mm). It implements a DDR3 SDRAM architecture with an 8‑bit prefetch pipelined design and supports high‑speed double data‑rate transfers for system memory applications requiring standard DDR3 interfaces.
Key device attributes include a 1.5 V supply, a measured access time of 13.91 ns, a listed clock frequency of 933 MHz, and RoHS compliance. The device supports JEDEC‑style DDR3 timing and features intended to improve signal capture and data integrity in compact board designs.
Key Features
- Memory Density & Organization — 2 Gbit density organized as 8 banks × 32M words × 8 bits (x8), providing a 1 KB page size for x8 configurations.
- DDR3 Architecture & Performance — Double data‑rate architecture with 8‑bit prefetch; datasheet series rates include supported data rates up to 2133 Mbps. The part level clock frequency is specified at 933 MHz with an access time of 13.91 ns.
- Flexible Burst & Latency Options — Supports burst lengths 8 and 4 (with Burst Chop), sequential and interleave burst types, a wide range of CAS latencies and CAS write latencies for system tuning.
- Signal Timing & Capture — Bi‑directional differential data strobe (DQS/ /DQS), DLL alignment with CK, edge/center alignment modes for READ/WRITE to support accurate data capture.
- Signal Integrity & Calibration — On‑Die Termination (ODT) options, ZQ calibration for DQ drive and ODT, and programmable output driver impedance control to help maintain signal quality.
- Power & Supply — Designed for 1.5 V DDR3 operation; surface‑mount 78‑FBGA package aids compact PCB implementations.
- Reliability & Refresh — Supports auto‑refresh and self‑refresh with average refresh periods per JEDEC timing; programmable features such as PASR and Multi Purpose Register (MPR) are supported in the series.
- Compliance & Grade — Lead‑free, halogen‑free and RoHS compliant; commercial grade with operating temperature specified from 0 °C to 85 °C.
Unique Advantages
- High‑capacity x8 configuration: 2 Gbit density in an x8 organization enables conventional DDR3 memory mapping with a 1 KB page size for efficient row/column access.
- Compact surface‑mount package: 78‑ball FBGA (7.5 × 11.0 mm) minimizes PCB footprint for space‑constrained designs.
- Timing flexibility for system tuning: Multiple CAS and CWL options plus selectable burst lengths let designers optimize latency and throughput tradeoffs.
- Built‑in signal integrity controls: ODT modes and ZQ calibration improve drive/termination matching and help maintain robust data signaling on high‑speed buses.
- Standards‑oriented DDR3 support: JEDEC‑style DDR3 timing and common DDR3 interface behavior simplify integration into existing DDR3 system architectures.
- Regulatory compliance: RoHS and lead‑free/halogen‑free package construction support environmental and manufacturing requirements.
Why Choose JSR362G088NHW?
JSR362G088NHW delivers a standard DDR3 SDRAM option with 2 Gbit capacity in a compact 78‑FBGA footprint, providing designers with JEDEC‑oriented timing flexibility, industry‑standard signaling features, and signal integrity controls such as ODT and ZQ calibration. The device is specified for 1.5 V operation with a commercial temperature range of 0 °C to 85 °C, making it suitable for mainstream embedded and consumer memory applications that require conventional DDR3 memory behavior.
Its combination of density, timing options, and FBGA packaging simplifies BOM choices for systems that need standard DDR3 memory modules while maintaining footprint efficiency and compliance with RoHS requirements.
Request a quote or submit an inquiry to purchase JSR362G088NHW and discuss availability and volume options for your design requirements.

Date Founded: 2000
Headquarters: Jeju-si, Jeju-do, Republic of Korea
Employees: 100+
Revenue: $100 Million
Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH