JSL22G328WABQ-25A

2Gb LPDDR2 Mobile SDRAM, Industrial Grade
Part Description

2Gb LPDDR2 Mobile SDRAM, Industrial Grade

Quantity 1,543 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package134-BGA (10.0x11.5mm)Memory FormatRAMTechnologySDRAM - Mobile LPDDR2
Memory Size2 GbitAccess TimeN/AGradeIndustrial
Clock Frequency533 MHzVoltage1.8V/1.2VMemory TypeVolatile
Operating Temperature-40°C - 85°CMounting MethodSurface MountMemory InterfaceLPDDR2
Memory Organizationx32Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSL22G328WABQ-25A – 2Gb LPDDR2 Mobile SDRAM, Industrial Grade

The JSL22G328WABQ-25A is a 2 Gbit mobile LPDDR2 SDRAM organized as x32, offered by Jeju Semiconductor for industrial embedded designs. It implements a double-data-rate architecture with differential clock and bidirectional data strobes to support high-throughput memory interfaces.

Targeted at systems that require low-voltage operation and robust temperature performance, this device delivers 533 MHz clock operation (1,066 Mb/s per pin), multi-bank concurrency, and a compact 134-ball BGA package (10.0 × 11.5 mm).

Key Features

  • Core Architecture  Double-data-rate (DDR) architecture with commands and addresses sampled on both positive and negative clock edges for efficient data transfer.
  • Memory Organization & Density  2 Gbit density organized as x32 to support wide data paths and system-level memory configurations.
  • Performance  533 MHz clock rate (–25A speed grade) delivering 1,066 Mb/s per pin; read and write latencies and timing are defined in the LPDDR2 AC timing tables.
  • Interface & Signaling  LPDDR2 interface with differential clock inputs (CK/CK#) and differential bidirectional data strobes (DQS/DQS#) for precise data capture; edge-aligned data output and center-aligned data input.
  • Power & Voltage  Supports VDD1/VDD2/VDDQ: 1.8 V / 1.2 V / 1.2 V and includes low-power modes such as Deep Power Down, Auto Refresh, Self Refresh, Partial Array Self Refresh, and Temperature Compensated Self Refresh.
  • Burst, Mask & Drive  Burst length configurable (default 4, selectable 8 or 16) with data mask (DM) for write data and configurable drive strength.
  • Banking & Refresh  Eight internal banks for concurrent operation and auto refresh duty cycle details defined in the datasheet.
  • Package & Mounting  Surface-mount 134-FBGA (supplier package 134-BGA, 10.0 × 11.5 mm) for compact board-level integration.
  • Industrial Temperature Grade  Rated for operation from −40 °C to 85 °C (industrial grade).

Typical Applications

  • Mobile and Handheld Devices  High-bandwidth LPDDR2 memory for compact mobile and handheld platforms requiring low-voltage operation.
  • Industrial Embedded Systems  Memory for industrial controllers and instrumentation where extended temperature range and robust refresh/low-power modes are needed.
  • Consumer and IoT Edge Devices  Local application memory for edge compute modules and connected devices that benefit from LPDDR2 power-saving modes and compact BGA packaging.

Unique Advantages

  • High Throughput at Low Voltage: 533 MHz clock (1,066 Mb/s per pin) operation combined with 1.2 V/1.8 V supply domains enables high data rates with LPDDR2 low-voltage benefits.
  • Flexible Burst and Masking Options: Configurable burst lengths (4/8/16) and write data mask (DM) provide design flexibility for varied transfer patterns.
  • Comprehensive Low-Power Modes: Deep Power Down plus multiple refresh/self-refresh modes (including partial and temperature-compensated self refresh) reduce system power during idle periods.
  • Industrial Temperature Range: −40 °C to 85 °C rating supports deployment in temperature-challenging industrial environments.
  • Compact BGA Package: 134-ball FBGA (10.0 × 11.5 mm) enables dense board integration for space-constrained designs.
  • Robust Signaling: Differential clock and bidirectional DQS/DQS# strobes with defined edge/center alignment behavior simplify timing and data capture strategies.

Why Choose JSL22G328WABQ-25A?

The JSL22G328WABQ-25A is positioned for designs that require 2 Gbit LPDDR2 performance with industrial-grade environmental tolerance and compact packaging. Its 533 MHz clock capability, LPDDR2 low-voltage domains, and comprehensive low-power features make it suitable for embedded and mobile applications where throughput, power efficiency, and temperature robustness matter.

Engineers specifying this device benefit from a wide data interface (x32), multiple internal banks for concurrency, and a small 134-FBGA footprint that eases integration into constrained PCB layouts while maintaining predictable timing and refresh behavior as documented in the datasheet.

If you would like pricing, availability, or technical details for design evaluation, request a quote or contact sales to discuss your requirements and lead times.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


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