JSL22G328WABQ-D25AM

The JSL22G328WABQ-D25AM is a 2 Gbit mobile LPDDR2 SDRAM organized as x32, offering double-data-rate operation for high-throughput memory applications. It combines a low-voltage power profile with LPDDR2 architecture to deliver efficient, burst-oriented access for space-constrained embedded and mobile designs.

Designed for systems that require low-voltage operation, fast data transfer and broad operating temperature capability, this device targets mobile and embedded memory applications where compact package and predictable timing are important.

Key Features

• Memory & Performance — 2 Gbit capacity with x32 organization and a 533 MHz clock rate (data rate 1,066 Mb/s per pin) for high-bandwidth transfers.
• LPDDR2 Architecture — Mobile LPDDR2 SDRAM with double-data-rate transfers, differential clock inputs (CK/CK#) and bidirectional data strobes (DQS/DQS#) for reliable DDR timing.
• Banking & Burst — 8 internal banks and selectable burst length (4 default, 8 or 16) supporting sequential or interleave burst types for flexible access patterns.
• Power Domains & Voltages — Multi-voltage design with VDD1/VDD2/VDDQ: 1.8 V / 1.2 V / 1.2 V, enabling low-voltage operation common to LPDDR2 memory.
• Power Management — Auto Refresh, Self Refresh, Partial Array Self Refresh, Temperature Compensated Self Refresh and Deep Power Down modes to reduce standby power.
• Timing & Drive — Configurable drive strength, data mask (DM) for write operations, and HSUL_12-compatible inputs; note that no DLL is used (CK to DQS not synchronized).
• Package & Mounting — Surface-mount 134-FBGA package (10.0 × 11.5 mm) for compact board integration.
• Operating Temperature — Wide operating temperature range: −40 °C to 105 °C.
• RoHS Compliant — Conforms to RoHS requirements for restricted substances.

Typical Applications

• Mobile and handheld devices — Provides low-voltage, high-rate LPDDR2 memory suited to compact mobile designs that require bursty, high-throughput data access.
• Embedded systems — Dense system memory for embedded SoMs and modules where board area and power efficiency are priorities.
• Industrial equipment — Suitable for temperature-challenging embedded controllers and edge devices that benefit from wide operating temperature range and low-voltage operation.

Unique Advantages

• High sustained data throughput — 533 MHz clock yielding 1,066 Mb/s per pin supports demanding data transfer requirements.
• Low-voltage operation — 1.8 V / 1.2 V power domains reduce system power draw compared with higher-voltage memories.
• Flexible access modes — Multiple burst lengths, 8-bank architecture and auto-precharge options enable efficient access patterns and simplified controller timing.
• Comprehensive power states — Auto/Partial/TCSR and Deep Power Down modes allow designers to optimize power for active and idle conditions.
• Compact industry-standard package — 134-FBGA (10.0 × 11.5 mm) provides a small footprint for dense board layouts.
• Wide temperature range — −40 °C to 105 °C operation supports deployments across varied thermal environments.

Why Choose JSL22G328WABQ-D25AM?

This LPDDR2 device provides a balanced combination of high-bandwidth DDR operation, low-voltage power domains and flexible power-management features in a compact FBGA package. Its x32 organization and 2 Gbit capacity make it appropriate for designs that need predictable latency and burst performance within a constrained footprint.

Engineers specifying this part will find a memory component that fits LPDDR2 system designs requiring compact packaging, configurable drive and refresh options, and extended temperature coverage for robust deployment.

Request a quote or submit an inquiry to discuss pricing, availability and lead times for the JSL22G328WABQ-D25AM. Our team can provide ordering and supply details to support your project schedule.