JSL22G328WA
| Part Description |
2Gb LPDDR2 Mobile SDRAM (x32 Die) |
|---|---|
| Quantity | 1,344 Available (as of June 16, 2026) |
| Product Category | DRAM Memory |
|---|---|
| Manufacturer | Jeju Semiconductor Corporation |
| Manufacturing Status | Mass Production |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | RAM | Technology | SDRAM - Mobile LPDDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | 400 MHz | Voltage | 1.8V/1.2V | Memory Type | Volatile | ||
| Operating Temperature | N/A | Mounting Method | Surface Mount | Memory Interface | LPDDR2 | ||
| Memory Organization | x32 | Moisture Sensitivity Level | N/A | RoHS Compliance | Compliant | ||
| REACH Compliance | REACH Unknown | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of JSL22G328WA – 2Gb LPDDR2 Mobile SDRAM (x32 Die)
The JSL22G328WA is a 2 Gbit volatile LPDDR2 SDRAM organized x32 and supplied as a die for surface-mount integration. It implements a double-data rate architecture with differential clock and data strobe signaling to deliver low-voltage, high-bandwidth memory for mobile and embedded designs.
This device targets designs that require LPDDR2-class performance and power management, offering 400 MHz clock operation (800 Mb/s per pin), multi-bank concurrency and a range of refresh and low-power modes documented by Jeju Semiconductor.
Key Features
- Core / Memory Architecture Double-data rate LPDDR2 architecture with 8 internal banks for concurrent operation; supports burst lengths of 4 (default), 8 or 16 and sequential or interleave burst types.
- Performance 400 MHz clock frequency delivering 800 Mb/s per pin (data rate) for the specified speed grade; read/write latencies and timing defined in the LPDDR2 AC timing tables.
- Interface & Timing Differential clock inputs (CK / CK#) and differential data strobes (DQS / DQS#) with bidirectional DQS for accurate data capture; commands and addresses are sampled on both clock edges.
- Data Alignment Edge-aligned data output and center-aligned data input for DDR signaling behavior; note CK-to-DQS is not synchronized (No DLL) as specified.
- Power & Voltage Multi-rail operation with VDD1/VDD2/VDDQ specified at 1.8V/1.2V/1.2V; supports Auto Refresh, Self Refresh, Partial Array Self Refresh, Temperature Compensated Self Refresh and Deep Power Down mode for low-power operation.
- Write Mask & Drive Data mask (DM) for write operations and configurable drive strength to tune interface signalling.
- Package & Mounting Supplier device package listed as Die with surface mount mounting type for compact integration into custom packages or PoP stacks.
- Operating Temperatures Standard and extended temperature grades documented: −25 to 85°C (Standard), −40 to 85°C (Industrial), and 85 to 105°C (Extended) as provided in the product documentation.
- Compliance RoHS compliant.
Typical Applications
- Mobile and Portable Devices Use as mobile LPDDR2 memory in compact, power-sensitive platforms requiring DDR transfer rates and low-voltage operation.
- Embedded Systems Suitable for embedded designs that need a 2Gb volatile memory device with multi-bank concurrency and flexible burst behavior.
- Consumer Electronics Integration into handheld or compact consumer modules where low-power self-refresh modes and configurable drive strength are beneficial.
Unique Advantages
- DDR Performance at Low Voltage 400 MHz operation with 1.8V/1.2V/1.2V rails provides high data throughput while maintaining LPDDR2 power characteristics.
- Flexible Burst and Bank Architecture Multiple burst length options and 8 internal banks enable efficient memory access patterns and improved throughput for bursty workloads.
- Comprehensive Power Modes Auto Refresh, Self Refresh, Partial Array Self Refresh, Temperature Compensated Self Refresh and Deep Power Down provide designers with multiple strategies to reduce power consumption.
- Interface Integrity Differential clock and data strobe signaling with configurable drive strength supports robust high-speed interface timing and signal integrity tuning.
- Broad Temperature Coverage Documented standard, industrial and extended temperature ranges allow selection for designs operating across varied thermal environments.
- RoHS Compliant Meets RoHS requirements for environmental compliance in applicable assemblies.
Why Choose JSL22G328WA?
The JSL22G328WA is positioned for designs that need a documented 2Gb LPDDR2 memory solution with x32 organization and 400 MHz operation. Its LPDDR2 feature set—differential signaling, multi-bank architecture, burst flexibility and multiple low-power modes—provides a clear, specification-driven option for compact, power-conscious systems.
Engineers and procurement teams looking for a Jeju Semiconductor-backed LPDDR2 die can rely on the device’s detailed timing, power and temperature specifications to evaluate fit in custom packages or high-density memory subsystems.
Request a quote or submit an inquiry for pricing and availability to receive detailed ordering and supply information based on your design and production requirements.

Date Founded: 2000
Headquarters: Jeju-si, Jeju-do, Republic of Korea
Employees: 100+
Revenue: $100 Million
Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH