JSL22G328WA

2Gb LPDDR2 Mobile SDRAM (x32 Die)
Part Description

2Gb LPDDR2 Mobile SDRAM (x32 Die)

Quantity 1,344 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device PackageDieMemory FormatRAMTechnologySDRAM - Mobile LPDDR2
Memory Size2 GbitAccess TimeN/AGradeN/A
Clock Frequency400 MHzVoltage1.8V/1.2VMemory TypeVolatile
Operating TemperatureN/AMounting MethodSurface MountMemory InterfaceLPDDR2
Memory Organizationx32Moisture Sensitivity LevelN/ARoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSL22G328WA – 2Gb LPDDR2 Mobile SDRAM (x32 Die)

The JSL22G328WA is a 2 Gbit volatile LPDDR2 SDRAM organized x32 and supplied as a die for surface-mount integration. It implements a double-data rate architecture with differential clock and data strobe signaling to deliver low-voltage, high-bandwidth memory for mobile and embedded designs.

This device targets designs that require LPDDR2-class performance and power management, offering 400 MHz clock operation (800 Mb/s per pin), multi-bank concurrency and a range of refresh and low-power modes documented by Jeju Semiconductor.

Key Features

  • Core / Memory Architecture Double-data rate LPDDR2 architecture with 8 internal banks for concurrent operation; supports burst lengths of 4 (default), 8 or 16 and sequential or interleave burst types.
  • Performance 400 MHz clock frequency delivering 800 Mb/s per pin (data rate) for the specified speed grade; read/write latencies and timing defined in the LPDDR2 AC timing tables.
  • Interface & Timing Differential clock inputs (CK / CK#) and differential data strobes (DQS / DQS#) with bidirectional DQS for accurate data capture; commands and addresses are sampled on both clock edges.
  • Data Alignment Edge-aligned data output and center-aligned data input for DDR signaling behavior; note CK-to-DQS is not synchronized (No DLL) as specified.
  • Power & Voltage Multi-rail operation with VDD1/VDD2/VDDQ specified at 1.8V/1.2V/1.2V; supports Auto Refresh, Self Refresh, Partial Array Self Refresh, Temperature Compensated Self Refresh and Deep Power Down mode for low-power operation.
  • Write Mask & Drive Data mask (DM) for write operations and configurable drive strength to tune interface signalling.
  • Package & Mounting Supplier device package listed as Die with surface mount mounting type for compact integration into custom packages or PoP stacks.
  • Operating Temperatures Standard and extended temperature grades documented: −25 to 85°C (Standard), −40 to 85°C (Industrial), and 85 to 105°C (Extended) as provided in the product documentation.
  • Compliance RoHS compliant.

Typical Applications

  • Mobile and Portable Devices Use as mobile LPDDR2 memory in compact, power-sensitive platforms requiring DDR transfer rates and low-voltage operation.
  • Embedded Systems Suitable for embedded designs that need a 2Gb volatile memory device with multi-bank concurrency and flexible burst behavior.
  • Consumer Electronics Integration into handheld or compact consumer modules where low-power self-refresh modes and configurable drive strength are beneficial.

Unique Advantages

  • DDR Performance at Low Voltage 400 MHz operation with 1.8V/1.2V/1.2V rails provides high data throughput while maintaining LPDDR2 power characteristics.
  • Flexible Burst and Bank Architecture Multiple burst length options and 8 internal banks enable efficient memory access patterns and improved throughput for bursty workloads.
  • Comprehensive Power Modes Auto Refresh, Self Refresh, Partial Array Self Refresh, Temperature Compensated Self Refresh and Deep Power Down provide designers with multiple strategies to reduce power consumption.
  • Interface Integrity Differential clock and data strobe signaling with configurable drive strength supports robust high-speed interface timing and signal integrity tuning.
  • Broad Temperature Coverage Documented standard, industrial and extended temperature ranges allow selection for designs operating across varied thermal environments.
  • RoHS Compliant Meets RoHS requirements for environmental compliance in applicable assemblies.

Why Choose JSL22G328WA?

The JSL22G328WA is positioned for designs that need a documented 2Gb LPDDR2 memory solution with x32 organization and 400 MHz operation. Its LPDDR2 feature set—differential signaling, multi-bank architecture, burst flexibility and multiple low-power modes—provides a clear, specification-driven option for compact, power-conscious systems.

Engineers and procurement teams looking for a Jeju Semiconductor-backed LPDDR2 die can rely on the device’s detailed timing, power and temperature specifications to evaluate fit in custom packages or high-density memory subsystems.

Request a quote or submit an inquiry for pricing and availability to receive detailed ordering and supply information based on your design and production requirements.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


    Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH


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