JSL24G328WABQ-D25AM

The JSL24G328WABQ-D25AM from Jeju Semiconductor is a 4 Gbit mobile LPDDR2 SDRAM device organized as x32. It implements double-data-rate architecture with differential clocking and bidirectional data strobes to deliver high-bandwidth, low-voltage memory for space-constrained applications.

Designed for systems that require compact, high-throughput volatile memory, this device offers flexible burst lengths, internal bank concurrency and multiple low-power refresh modes to balance performance and power consumption across a broad operating temperature range.

Key Features

• Capacity & Organization 4 Gbit total density implemented as 2Gb × 2-stack, organized as x32 for wide data paths and efficient access.
• Performance 533 MHz clock rate (DDR) supporting up to 1066 Mb/s per pin with double-data-rate transfers for high sustained throughput.
• LPDDR2 Interface & Timing LPDDR2 protocol with differential clock inputs (CK/CK#), differential DQS/DQS# data strobes and support for configurable read/write latencies and burst lengths (4, 8, 16).
• Power Rails Multi-rail supply configuration: VDD1/VDD2/VDDQ with nominal voltages at 1.8 V and 1.2 V to enable low-voltage operation and power optimization.
• Low-Power & Refresh Modes Auto Refresh, Self Refresh, Partial Array Self Refresh, Temperature Compensated Self Refresh and Deep Power Down modes for reduced standby power.
• Memory Management Eight internal banks, auto precharge option and data mask (DM) support for efficient concurrent operations and write masking.
• Packaging & Mounting 134-ball FBGA surface-mount package (134-BGA, 10.0×11.5 mm) for high-density board integration.
• Environmental & Reliability Specified operating temperature range from -40°C to 105°C and RoHS compliance for broad environmental tolerance.

Typical Applications

• Mobile devices — High-bandwidth LPDDR2 interface and low-voltage operation suited for handheld and mobile memory subsystems.
• Compact embedded systems — x32 organization and FBGA package enable dense memory integration in space-constrained designs.
• Extended-temperature electronics — Operational range down to -40°C and up to 105°C supports designs that require extended environmental tolerance.
• Low-power designs — Multiple self-refresh and deep power-down modes reduce standby power in battery-operated equipment.

Unique Advantages

• High sustained throughput: 533 MHz DDR operation yields up to 1066 Mb/s per pin for demanding memory bandwidth needs.
• Flexible burst and bank architecture: Burst lengths of 4/8/16 and eight internal banks enable efficient, concurrent access patterns.
• Low-voltage multi-rail support: 1.8 V / 1.2 V supply configuration helps minimize power consumption while maintaining signal integrity.
• Comprehensive low-power modes: Auto/self/partial array refresh and deep power down provide multiple options to optimize idle power.
• Compact, high-density package: 134-ball FBGA (10.0×11.5 mm) supports high memory integration in small form-factor PCBs.
• Wide operating temperature span: Specified operation from -40°C to 105°C for applications requiring extended environmental range.

Why Choose JSL24G328WABQ-D25AM?

The JSL24G328WABQ-D25AM delivers a balanced combination of high bandwidth, low-voltage operation and compact packaging. Its LPDDR2 architecture, wide data path and multiple power-saving modes make it a practical choice for designers needing high-throughput volatile memory in space- and power-constrained designs.

Manufactured by Jeju Semiconductor, this device is suited for projects that demand integrated memory performance across a broad temperature window and that benefit from configurable timing, refresh and drive-strength options for system-level tuning and reliability.

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