JSR362G088NHW-I
| Part Description |
2Gb DDR3 SDRAM, Industrial Grade, 78‑FBGA |
|---|---|
| Quantity | 960 Available (as of June 16, 2026) |
| Product Category | DRAM Memory |
|---|---|
| Manufacturer | Jeju Semiconductor Corporation |
| Manufacturing Status | Mass Production |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | 78-BGA (7.5x11.0mm) | Memory Format | RAM | Technology | SDRAM - DDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 13.91 ns | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C - 95°C | Mounting Method | Surface Mount | Memory Interface | DDR3 SDRAM | ||
| Memory Organization | x8 | Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | ||
| REACH Compliance | REACH Unknown | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of JSR362G088NHW-I – 2Gb DDR3 SDRAM, Industrial Grade, 78‑FBGA
The JSR362G088NHW-I is a 2 Gbit volatile DDR3 SDRAM organized as x8 and supplied in a 78‑ball FBGA (7.5 × 11.0 mm) surface‑mount package. It implements DDR3 architecture with synchronous, double data‑rate operation and JEDEC‑compliant timing options to support embedded and industrial memory applications.
Designed for industrial temperature operation (‑40 °C to +95 °C) and 1.5 V DDR3 supply, this device targets applications requiring a compact, high‑density DRAM element with flexible timing, on‑die termination and calibration features for reliable high‑speed operation.
Key Features
- Memory Density & Organization — 2 Gbit density configured as 8 banks × 32M words × 8 bits (x8 organization), providing a 1 KB page size for efficient burst accesses.
- DDR3 SDRAM Architecture — Double data‑rate, pipelined architecture with bi‑directional differential data strobe (DQS/ /DQS) and differential clock inputs for synchronized high‑speed transfers.
- Performance Parameters — Specified clock frequency 933 MHz and access time 13.91 ns; series supports multiple data‑rate grades with JEDEC timing options for CL and CWL.
- Timing Flexibility — Wide CAS latency and CAS write latency options (CL and CWL ranges provided in datasheet) and support for burst lengths 4 and 8 with Burst Chop for adaptable throughput and latency tradeoffs.
- Signal Integrity & Calibration — On‑Die Termination (ODT) options, ZQ calibration for DQ drive and ODT, and programmable output driver impedance for robust signal integrity in complex board environments.
- Refresh & Power Management — Supports auto‑refresh and self‑refresh with average refresh periods defined for typical and elevated temperatures; programmable partial array self‑refresh (PASR) for power optimization.
- Industrial Grade Temperature Range — Rated for operation from ‑40 °C to +95 °C, suitable for harsher environmental conditions.
- Package & Mounting — 78‑ball FBGA surface‑mount package, compact 7.5 × 11.0 mm footprint for space‑constrained designs.
- Standards & Compliance — JEDEC‑compliant DDR3 series architecture; RoHS lead‑free and halogen‑free packaging.
Typical Applications
- Industrial Embedded Systems — Memory for controllers, PLCs and embedded boards that require industrial temperature operation and reliable DDR3 storage.
- Communications Equipment — Buffer and working memory in networking and telecom modules where JEDEC‑compliant DDR3 timing and ODT improve signal integrity.
- Instrumentation & Control — High‑density DRAM for data buffering and real‑time processing in test, measurement and control systems operating across wide temperatures.
Unique Advantages
- Industrial Temperature Rating — Operation from ‑40 °C to +95 °C ensures reliable performance in demanding environmental conditions.
- Compact, Surface‑Mount Package — 78‑ball FBGA (7.5 × 11.0 mm) minimizes PCB area while delivering 2 Gbit density.
- Flexible Timing & Data Rates — Multiple CAS and CWL options and burst modes allow designers to tune latency and throughput for target system requirements.
- Signal Integrity Controls — ODT, programmable driver impedance and ZQ calibration simplify high‑speed memory interface design and tuning.
- Power and Refresh Management — Self‑refresh, auto‑refresh and PASR reduce power in standby modes and extend suitability for low‑power segments of industrial systems.
- JEDEC Compliance and RoHS Packaging — Industry standard timing and environmentally compliant lead‑free/halogen‑free package support interoperability and regulatory needs.
Why Choose JSR362G088NHW-I?
The JSR362G088NHW-I positions itself as a durable, high‑density DDR3 memory component for industrial and embedded designs that require a compact footprint and wide operating temperature range. With x8 organization, flexible timing options and on‑die termination/calibration features, it provides the essential building block for stable high‑speed memory interfaces in constrained board layouts.
This device is suited for designers seeking JEDEC‑compliant DDR3 memory with industrial reliability, straightforward signal‑integrity controls and a surface‑mount package that eases integration into space‑limited systems. Its combination of density, temperature rating and industry standard features support long‑term deployable designs.
Request a quote or submit an inquiry to receive pricing, availability and technical support information for JSR362G088NHW-I. Our team will provide the details you need to evaluate and integrate this DDR3 memory into your design.