JSR362G088NHW-LI

2Gb DDR3L SDRAM (Industrial-grade, 78-FBGA)
Part Description

2Gb DDR3L SDRAM (Industrial-grade, 78-FBGA)

Quantity 604 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package78-BGA (7.5x11.0mm)Memory FormatRAMTechnologySDRAM - DDR3L
Memory Size2 GbitAccess Time13.91 nsGradeIndustrial
Clock Frequency933 MHzVoltage1.35VMemory TypeVolatile
Operating Temperature-40°C - 95°CMounting MethodSurface MountMemory InterfaceDDR3L SDRAM
Memory Organizationx8Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSR362G088NHW-LI – 2Gb DDR3L SDRAM (Industrial-grade, 78-FBGA)

The JSR362G088NHW-LI is a 2 Gbit DDR3L SDRAM device organized as x8 volatile memory, implemented in a 78-ball FBGA surface-mount package. Designed for industrial operating conditions, it delivers high-speed double-data-rate operation with a low-voltage 1.35 V supply.

Built on DDR3(L) SDRAM architecture with an 8-bank prefetch pipelined core, this device targets industrial embedded systems that require compact footprint, robust temperature performance, and reliable high-throughput memory for system buffering and working memory.

Key Features

  • Density & Organization — 2 Gbit capacity organized as 8 banks × 32M words × 8 bits (x8).
  • DDR3L Technology — DDR3L SDRAM with low-voltage operation at VDD/VDDQ = 1.35 V (operating range 1.283 V to 1.45 V) and backward compatibility with DDR3 (1.5 V) operation.
  • Data Rates & Timing — Supports high data throughput modes described in the series specification (data rates up to 2133 Mbps); key measured access time listed at 13.91 ns for the applicable speed grade.
  • Prefetch & Double Data-Rate Architecture — 8-bit prefetch, two data transfers per clock cycle with edge- and center-aligned DQS for reliable read/write capture.
  • Signal Integrity & Calibration — On-Die Termination (synchronous, dynamic, asynchronous), ZQ calibration for DQ drive/ODT, and programmable output driver impedance control.
  • Refresh & Self-Refresh — Auto-refresh and self-refresh modes with average refresh periods defined for temperature ranges (7.8 µs at TC ≤ +85°C; 3.9 µs at TC > +85°C).
  • Package & Mounting — 78-ball FBGA surface-mount package; supplier device package specified as 78-BGA (7.5×11.0 mm).
  • Industrial Temperature Rating — Operating temperature range: −40 °C to +95 °C (industrial grade).
  • Standards & Compliance — JEDEC-compliant DDR3 implementation and RoHS compliant (lead-free & halogen-free).

Typical Applications

  • Industrial Embedded Systems — Works as system DRAM for industrial controllers and embedded compute modules that require wide temperature range and reliable memory buffering.
  • Networking & Telecom Equipment — Suitable for high-throughput buffering and packet processing where DDR3L performance and signal integrity features are required.
  • Communications and Infrastructure Devices — Ideal for devices needing compact surface-mount memory with high data rates and robust operating temperature performance.

Unique Advantages

  • Low-Voltage Operation: 1.35 V VDD/VDDQ reduces system power compared with standard 1.5 V DDR3 while maintaining DDR3 compatibility where required.
  • Industrial Temperature Range: Rated −40 °C to +95 °C to meet demanding environmental requirements in industrial deployments.
  • Compact FBGA Package: 78-ball FBGA (7.5×11.0 mm) provides a small footprint for space-constrained PCB designs while supporting surface-mount assembly.
  • Signal Integrity and Calibration: ODT options and ZQ calibration improve signal quality and simplify board-level termination design.
  • Flexible Performance Profiles: Series-level data rates up to 2133 Mbps and a range of CAS/CWL options allow designers to select timing that matches system performance targets.
  • JEDEC Compliance and RoHS: JEDEC DDR3 compatibility and lead-free/halogen-free construction support standard memory interfaces and regulatory requirements.

Why Choose JSR362G088NHW-LI?

The JSR362G088NHW-LI combines 2 Gbit DDR3L capacity with industrial-grade temperature tolerance and a compact 78-FBGA package, delivering a reliable low-voltage SDRAM option for embedded and networking designs. Its DDR3L architecture, on-die termination features, and calibration support make it suitable for systems that require robust signal integrity and flexible timing choices.

This device is appropriate for engineers specifying production-ready memory for industrial and communications hardware where compact footprint, proven JEDEC DDR3 behavior, and extended temperature operation are required.

Request a quote or submit a product inquiry today to evaluate JSR362G088NHW-LI for your next design.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


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    Revenue: $100 Million


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