JSR362G088NHW-LA

The JSR362G088NHW-LA is a 2 Gbit DDR3L SDRAM device in a 78-ball FBGA package, designed for commercial-grade memory applications. Built on a DDR3(L) architecture with an x8 organization, it provides high-speed, double data‑rate memory access and is suitable for system memory and buffering in compact, surface-mount designs.

This device delivers low-voltage operation at 1.35 V, JEDEC‑compliant DDR3 features, and a package optimized for space-constrained boards, offering a balance of performance and integration for commercial embedded and computing products.

Key Features

• Memory Capacity & Organization — 2 Gbit density organized as 8 banks × 32M × 8 bits (x8).
• DDR3L Interface — DDR3L SDRAM interface with VDD/VDDQ nominal 1.35 V (operating range 1.283 to 1.45 V) and backward compatibility with DDR3 (1.5 V).
• High Data Rates & Timing — Supports data rates up to 2133 Mbps (series specification lists 1333/1600/1866/2133 Mbps) with CAS latency options and measured access time down to 13.09 ns for high-speed grades.
• Low‑power Operation — DDR3L low-voltage operation at 1.35 V reduces power consumption compared with higher‑voltage DDR3 variants.
• Signal Integrity & Timing Controls — On‑Die Termination (ODT), DLL for alignment, differential DQS/[DQS] strobes, and programmable output driver impedance for robust high-speed signaling.
• Advanced DRAM Features — Burst lengths 8 and 4 with Burst Chop, data mask (DM), Multi Purpose Register (MPR), ZQ calibration, and programmable partial array self-refresh (PASR).
• Package & Mounting — 78‑FBGA surface‑mount package; supplier device package specified as 78‑BGA (7.5 × 11.0 mm).
• Compliance & Materials — Lead‑free, halogen‑free construction and RoHS compliant.
• Commercial Temperature Range — Specified operating temperature 0 °C to 85 °C.

Typical Applications

• Commercial embedded systems — System DRAM and working memory for compact embedded platforms that require surface‑mount, low‑voltage DDR memory.
• Consumer and computing devices — High‑bandwidth buffer memory in consumer electronics and computing modules where DDR3L performance and compact package size are required.
• Networking and communications equipment — Packet buffering and temporary data storage leveraging the device’s high data rates and programmable timing features.

Unique Advantages

• Low‑voltage DDR3L operation: 1.35 V nominal supply reduces power draw compared with 1.5 V parts while maintaining DDR3 feature set.
• Flexible performance scaling: Support for multiple data rates (up to 2133 Mbps in the series) and a broad CAS/CWL range enables tuning for different system performance targets.
• Robust signal control: DLL, DQS differential strobes, ODT and ZQ calibration improve signal integrity at high transfer speeds.
• Compact, surface‑mount package: 78‑FBGA (7.5 × 11.0 mm) offers high-density memory in a small footprint for space-constrained designs.
• Compliance and materials assurance: Lead‑free and halogen‑free construction with RoHS compliance supports regulatory and environmental requirements.

Why Choose JSR362G088NHW-LA?

JSR362G088NHW-LA delivers a practical combination of 2 Gbit density, DDR3L low‑voltage operation, and a compact 78‑FBGA footprint for designers targeting commercial embedded and computing applications. Its feature set—including programmable timing, ODT, DLL, and ZQ calibration—helps maintain signal integrity and performance across a range of data rates.

This device is suited for teams needing a surface‑mount DDR3L memory solution that balances performance, power efficiency, and board‑space economy while meeting RoHS and material expectations for commercial products.

Request a quote or submit an inquiry to receive pricing, availability, and ordering information for JSR362G088NHW-LA. Our team can provide volume pricing and lead‑time details to support your design schedule.