JSR362G088NHW-LAI

The JSR362G088NHW-LAI is a 2 Gbit DDR3L SDRAM device organized as 8 banks × 32M words × 8 bits. It implements a double data‑rate architecture with an 8‑bit prefetch pipelined core and supports JEDEC‑compliant DDR3(L) operation.

Designed for systems requiring high data throughput and extended environmental range, this 1.35 V memory device delivers data rates up to 2133 Mbps, compact 78‑ball FBGA packaging, and industrial temperature operation from −40 °C to +95 °C.

Key Features

• Core & Memory Architecture — 2 Gbit density with an 8‑bit prefetch pipelined architecture and eight internal banks for concurrent operation (8 banks × 32M words × 8 bits).
• DDR3L Interface & Data Rates — JEDEC‑compliant DDR3(L) SDRAM supporting data rates up to 2133 Mbps with burst lengths of 8 and 4 (with Burst Chop).
• Timing & Latency Options — Multiple CAS latency and CAS write latency settings supported (CL and CWL options listed in the specification) with documented timing values (e.g., 13.09 ns for 2133 MT/s target).
• Power & Voltage — Low‑voltage operation at VDD/VDDQ = 1.35 V (range 1.283 to 1.45 V) with backward compatibility to 1.5 V DDR3 operation noted in the specification.
• Signal Integrity & Drive Control — On‑Die Termination (ODT) including synchronous, dynamic and asynchronous ODT modes, programmable output driver impedance and ZQ calibration for drive/ODT accuracy.
• Package & Mounting — 78‑ball FBGA surface‑mount package (78‑BGA, 7.5 × 11.0 mm) suitable for compact PCB implementations.
• Industrial Temperature Range — Rated for operation from −40 °C to +95 °C, covering industrial application environments.
• Standards & Compliance — JEDEC DDR3 compliant and RoHS lead‑free/halogen‑free packaging.

Typical Applications

• Industrial systems — Memory for embedded controllers and industrial automation equipment that require operation across −40 °C to +95 °C.
• Networking & telecom equipment — High‑speed buffering and packet memory where data rates up to 2133 Mbps and concurrent bank operation improve throughput.
• Embedded computing — Low‑voltage 1.35 V DDR3L memory for compact, power‑sensitive designs using 78‑ball FBGA packaging.
• General high‑performance memory subsystems — Systems requiring JEDEC‑compliant DDR3 features such as programmable CL/CWL, burst modes, and on‑die termination.

Unique Advantages

• High sustained throughput — Supports DDR3 data rates up to 2133 Mbps and burst operation for efficient high‑bandwidth transfers.
• Low‑voltage operation — 1.35 V supply reduces power draw compared with higher‑voltage DDR3 while maintaining backward compatibility with 1.5 V DDR3.
• Robust industrial temperature rating — −40 °C to +95 °C operation helps ensure reliable memory operation in harsh environments.
• Flexible timing and drive control — Multiple CL/CWL options, programmable driver impedance and ZQ calibration enable tuning for system signal‑integrity and timing requirements.
• Compact board footprint — 78‑ball FBGA (7.5 × 11.0 mm) reduces PCB area for space‑constrained designs.
• Regulatory and manufacturing readiness — Lead‑free and halogen‑free FBGA package with JEDEC DDR3 compliance simplifies integration into modern production flows.

Why Choose JSR362G088NHW-LAI?

JSR362G088NHW-LAI provides a balanced combination of high data‑rate DDR3L performance, low‑voltage operation, and industrial‑grade environmental tolerance. Its 2 Gb density, flexible timing options and on‑die termination features support designs that require reliable high‑throughput memory in compact packages.

This device is well suited to engineers developing industrial, networking, and embedded systems that need JEDEC‑compliant DDR3L memory with programmable drive characteristics, compact 78‑FBGA mounting, and RoHS‑compliant packaging for production deployment.

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