KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V

LPDDR SDRAM KGD
Part Description

LPDDR SDRAM 1.8V/2.5V

Quantity 118 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologyLPDDR SDRAM
Memory SizeN/AAccess TimeN/AGradeKnown Good Die
Clock FrequencyN/AVoltage2.5VMemory TypeVolatile
Operating TemperatureN/AWrite Cycle Time Word PageN/APackagingN/A
Mounting MethodN/AMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level1RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.02

Overview of KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V – LPDDR SDRAM 1.8V/2.5V

The ESMT LPDDR SDRAM KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V is a volatile DRAM device organized as 4M × 16 and delivered as a Known Good Die. It implements LPDDR SDRAM technology with a parallel memory interface and a specified voltage supply of 2.5V.

This part is RoHS compliant and is offered by ESMT as part of the ESMT LPDDR SDRAM KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V series.

Key Features

  • Memory Technology LPDDR SDRAM technology providing volatile DRAM storage with standard SDRAM architecture.
  • Organization 4M × 16 memory organization specifying capacity and 16-bit data width for parallel operation.
  • Interface Parallel memory interface enabling conventional DRAM system integration.
  • Voltage Supply Specified supply voltage of 2.5V as indicated in the product specifications.
  • Grade Supplied as Known Good Die (KGD), indicating die-level test verification prior to delivery.
  • Regulatory Compliance RoHS compliant to meet environmental substance requirements.
  • Manufacturer Produced by ESMT and offered within the ESMT LPDDR SDRAM KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V series.

Typical Applications

  • Embedded memory arrays Use as a 4M × 16 LPDDR SDRAM element where parallel DRAM storage is required on-die.
  • Memory subsystem integration Suitable for designs that incorporate die-level LPDDR SDRAM with a parallel interface.
  • RoHS-sensitive designs Integration into products that require RoHS-compliant memory components.

Unique Advantages

  • Known Good Die delivery: Die-level testing reduces assembly risk by providing verified die for downstream packaging and integration.
  • Clear memory organization: 4M × 16 configuration offers a defined density and 16-bit data path for predictable system design.
  • Parallel interface compatibility: Parallel memory interface aligns with conventional DRAM system architectures for straightforward integration.
  • RoHS compliance: Conforms to environmental substance restrictions, supporting regulatory requirements in product designs.
  • Manufactured by ESMT: Part of the ESMT LPDDR SDRAM series, providing procurement traceability to a known supplier.

Why Choose KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V?

KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V positions itself as a tested, die-level LPDDR SDRAM option for designs that require a 4M × 16 organization and a parallel interface. Its Known Good Die grade and RoHS compliance provide clear benefits for integration and regulatory alignment.

This part is appropriate for engineers and procurement teams seeking a manufacturer-specified LPDDR SDRAM die from ESMT with defined electrical and organizational characteristics for incorporation into larger memory subsystems or die-level assemblies.

Request a quote or submit an inquiry to receive pricing and availability information for KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V. Our team will provide the next steps for purchasing and die-level supply.

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