KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V
| Part Description |
LPDDR SDRAM 1.8V/2.5V |
|---|---|
| Quantity | 118 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | LPDDR SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | N/A | Access Time | N/A | Grade | Known Good Die | ||
| Clock Frequency | N/A | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | N/A | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 1 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V – LPDDR SDRAM 1.8V/2.5V
The ESMT LPDDR SDRAM KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V is a volatile DRAM device organized as 4M × 16 and delivered as a Known Good Die. It implements LPDDR SDRAM technology with a parallel memory interface and a specified voltage supply of 2.5V.
This part is RoHS compliant and is offered by ESMT as part of the ESMT LPDDR SDRAM KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V series.
Key Features
- Memory Technology LPDDR SDRAM technology providing volatile DRAM storage with standard SDRAM architecture.
- Organization 4M × 16 memory organization specifying capacity and 16-bit data width for parallel operation.
- Interface Parallel memory interface enabling conventional DRAM system integration.
- Voltage Supply Specified supply voltage of 2.5V as indicated in the product specifications.
- Grade Supplied as Known Good Die (KGD), indicating die-level test verification prior to delivery.
- Regulatory Compliance RoHS compliant to meet environmental substance requirements.
- Manufacturer Produced by ESMT and offered within the ESMT LPDDR SDRAM KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V series.
Typical Applications
- Embedded memory arrays Use as a 4M × 16 LPDDR SDRAM element where parallel DRAM storage is required on-die.
- Memory subsystem integration Suitable for designs that incorporate die-level LPDDR SDRAM with a parallel interface.
- RoHS-sensitive designs Integration into products that require RoHS-compliant memory components.
Unique Advantages
- Known Good Die delivery: Die-level testing reduces assembly risk by providing verified die for downstream packaging and integration.
- Clear memory organization: 4M × 16 configuration offers a defined density and 16-bit data path for predictable system design.
- Parallel interface compatibility: Parallel memory interface aligns with conventional DRAM system architectures for straightforward integration.
- RoHS compliance: Conforms to environmental substance restrictions, supporting regulatory requirements in product designs.
- Manufactured by ESMT: Part of the ESMT LPDDR SDRAM series, providing procurement traceability to a known supplier.
Why Choose KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V?
KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V positions itself as a tested, die-level LPDDR SDRAM option for designs that require a 4M × 16 organization and a parallel interface. Its Known Good Die grade and RoHS compliance provide clear benefits for integration and regulatory alignment.
This part is appropriate for engineers and procurement teams seeking a manufacturer-specified LPDDR SDRAM die from ESMT with defined electrical and organizational characteristics for incorporation into larger memory subsystems or die-level assemblies.
Request a quote or submit an inquiry to receive pricing and availability information for KGD-4Mbx16-LPDDR-SDRAM-1.8V/2.5V. Our team will provide the next steps for purchasing and die-level supply.
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