MT29F64G08AKCBBH2-12:B
| Part Description |
IC FLASH 64GBIT PARALLEL 100TBGA |
|---|---|
| Quantity | 32 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AKCBBH2-12:B – IC FLASH 64GBIT PARALLEL 100TBGA
The MT29F64G08AKCBBH2-12:B is a 64 Gbit NAND flash memory device provided in a 100-TBGA (12×18) package. It is organized as 8G × 8, implements FLASH‑NAND non-volatile memory, and uses a parallel memory interface.
Key electrical and environmental parameters include an 83 MHz clock frequency, a supply voltage range of 2.7 V to 3.6 V, and an operating ambient temperature range of 0°C to 70°C.
Key Features
- Memory Technology FLASH – NAND non-volatile memory providing 64 Gbit density in an 8G × 8 organization.
- Interface Parallel memory interface with an 83 MHz clock frequency for synchronized transfers.
- Voltage Supply Operates from 2.7 V to 3.6 V to match common system power rails.
- Package Supplied in a 100‑TBGA package (12×18) for compact board-level integration.
- Operating Temperature Rated for 0°C ~ 70°C (TA) for standard commercial ambient conditions.
- Memory Size 64 Gbit total capacity suitable for on-board data and code storage.
Unique Advantages
- High-density storage: 64 Gbit capacity supports substantial on-board data or firmware storage in a single device.
- Parallel access performance: Parallel interface combined with an 83 MHz clock frequency supports consistent timing for memory transactions.
- Flexible power integration: 2.7 V–3.6 V supply range aligns with common system power rails to simplify power-domain design.
- Compact TBGA footprint: 100‑TBGA (12×18) package enables a small board area while maintaining robust mechanical packaging.
- Non-volatile data retention: FLASH NAND technology preserves stored data without power, suitable for persistent storage needs.
- Commercial temperature rating: 0°C to 70°C rating matches many standard commercial electronic applications.
Why Choose MT29F64G08AKCBBH2-12:B?
The MT29F64G08AKCBBH2-12:B positions itself as a straightforward, high-density NAND flash option for designs requiring 64 Gbit of parallel non-volatile storage in a compact 100‑TBGA package. Its defined clock frequency, supply voltage range, and commercial temperature rating provide clear integration parameters for system designers and procurement teams.
This device is suitable for projects that need a fixed-capacity parallel FLASH solution with a 2.7 V–3.6 V power envelope and a 0°C–70°C operating range, enabling predictable electrical and thermal planning at the board level.
Request a quote or submit a parts inquiry for MT29F64G08AKCBBH2-12:B to obtain pricing, lead time, and availability information.
