MT29F64G08AKCCBH2-10Z:C

The MT29F64G08AKCCBH2-10Z:C is a 64 Gbit non-volatile NAND flash memory device provided by Micron Technology Inc. It implements FLASH - NAND memory organized as 8G × 8 and presents a parallel memory interface.

Designed for systems that require parallel NAND flash storage, the device combines a 64 Gbit capacity with a 100 MHz clock interface, a 100-TBGA (12×18) package footprint, and a 2.7 V–3.6 V supply voltage range to support compact board-level integration within ambient operating conditions of 0°C–70°C.

Key Features

• Memory Type Non-volatile FLASH - NAND memory with a storage capacity of 64 Gbit, organized as 8G × 8.
• Interface & Performance Parallel memory interface with a clock frequency rating of 100 MHz for system integration that uses parallel NAND connectivity.
• Voltage Supply Operates from a 2.7 V to 3.6 V supply range, enabling compatibility with common 3 V system domains.
• Package 100-TBGA package (12×18 mm) providing a compact BGA form factor for high-density board designs.
• Operating Temperature Rated for ambient operation from 0°C to 70°C (TA), suitable for standard commercial temperature environments.

Typical Applications

• Embedded storage modules Provides parallel NAND flash capacity for embedded systems requiring up to 64 Gbit of non-volatile storage.
• Firmware and code storage Used where parallel FLASH memory is required to store firmware, boot code, or system images.
• Data logging and buffering Suitable for applications that need reliable non-volatile buffering or local data retention in a compact package.

Unique Advantages

• High-density storage: 64 Gbit capacity in a single device reduces board-level component count for large local storage needs.
• Compact BGA footprint: 100-TBGA (12×18) package enables integration into space-constrained designs while supporting high pin density.
• Standard supply voltage: 2.7 V–3.6 V operation aligns with common 3 V system rails for straightforward power domain integration.
• Parallel interface with 100 MHz clock: Parallel connectivity and specified 100 MHz clock frequency simplify interfacing in parallel-NAND architectures.
• Commercial temperature rating: 0°C–70°C operating range for deployments in standard commercial environments.

Why Choose MT29F64G08AKCCBH2-10Z:C?

The MT29F64G08AKCCBH2-10Z:C positions itself as a straightforward, high-density parallel NAND flash option for designs that require 64 Gbit of non-volatile storage in a compact BGA package. Its 100 MHz clock rating, 2.7 V–3.6 V supply range, and 100-TBGA (12×18) footprint make it suitable for embedded systems, firmware storage, and data buffering applications within the specified 0°C–70°C operating range.

Manufactured by Micron Technology Inc., the device is intended for customers seeking a verified parallel FLASH - NAND memory component that matches standard commercial operating conditions and board-level form-factor constraints.

Request a quote or contact sales to discuss pricing, availability, and delivery for the MT29F64G08AKCCBH2-10Z:C.