MT29F64G08AMCBBH2-12IT:B

The MT29F64G08AMCBBH2-12IT:B is a 64 Gbit non-volatile FLASH NAND memory device organized as 8G × 8 with a parallel memory interface. It provides board-level, high-density NAND storage in a compact 100-TBGA (12×18) package.

Designed for systems that require parallel FLASH memory with a defined clock and wide operating conditions, the device supports a 2.7 V to 3.6 V supply range and an operating ambient temperature range of −40°C to 85°C.

Key Features

• Memory Type & Organization  Non-volatile FLASH - NAND technology organized as 8G × 8 for a total capacity of 64 Gbit.
• Interface & Clock  Parallel memory interface with a specified clock frequency of 83 MHz for synchronous system timing.
• Voltage Supply  Operates from 2.7 V to 3.6 V, supporting common board-level power rails.
• Package  Supplied in a 100-TBGA package (12×18) for compact, high-density board mounting.
• Temperature Range  Rated for an ambient operating temperature range of −40°C to 85°C (TA).
• Memory Format & Mounting  Provided as FLASH memory in a package intended for surface-mount assembly.

Typical Applications

• Non-volatile storage for embedded systems — Provides 64 Gbit of parallel NAND FLASH for code or data storage in systems that use parallel memory interfaces.
• Board-level high-density memory — Suited for designs that require large NAND capacity in a compact 100-TBGA (12×18) footprint.
• Systems with extended ambient ranges — Usable in environments operating between −40°C and 85°C where wide temperature tolerance is required.

Unique Advantages

• High-density NAND capacity: 64 Gbit organized as 8G × 8 enables substantial on-board FLASH storage in a single device.
• Parallel interface with defined clock: Parallel memory interface and an 83 MHz clock frequency provide predictable timing for system integration.
• Wide supply voltage range: 2.7 V to 3.6 V operation matches common system power rails for flexible deployment.
• Compact 100-TBGA package: 100-TBGA (12×18) packaging supports high-density surface-mount layouts.
• Extended operating temperature: −40°C to 85°C ambient rating supports deployment across a broad range of thermal environments.

Why Choose IC FLASH 64GBIT PARALLEL 100TBGA?

The MT29F64G08AMCBBH2-12IT:B positions itself as a high-density, parallel NAND FLASH option that balances capacity, package density, and environmental range. Its 64 Gbit organization, 100-TBGA footprint, and defined electrical characteristics make it suitable for designs that require compact, board-mounted non-volatile memory with a parallel interface.

This device is appropriate for engineers specifying large-capacity FLASH where a 2.7 V–3.6 V supply, an 83 MHz clock, and operation from −40°C to 85°C are required. It delivers long-term value through its high memory density and compact package for space-constrained board designs.

Request a quote or submit an inquiry to receive pricing and availability for MT29F64G08AMCBBH2-12IT:B and to discuss how this 64 Gbit parallel FLASH device can fit your design requirements.