MT29F64G08CBAAAWP-IT:A
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 159 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBAAAWP-IT:A – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBAAAWP-IT:A is a 64 Gbit non-volatile NAND flash memory device organized as 8G × 8 with a parallel memory interface. It is supplied in a 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) package and operates from 2.7 V to 3.6 V.
This device provides high-density parallel flash storage with an operating temperature range of -40°C to 85°C, suitable for designs that require robust temperature tolerance and a standard TSOP footprint for board-level integration.
Key Features
- Memory Type & Organization Non-volatile NAND flash memory organized as 8G × 8 (64 Gbit) for high-density storage.
- Memory Size 64 Gbit total capacity.
- Interface Parallel memory interface for direct parallel data access and legacy parallel bus integration.
- Supply Voltage Operates from 2.7 V to 3.6 V, accommodating common 3.3 V nominal supply rails.
- Package 48-TSOP I (48-TFSOP) package with a 0.724" (18.40 mm) width for standard TSOP PCB footprints.
- Operating Temperature Specified for -40°C to 85°C (TA) to address temperature-demanding system requirements.
Unique Advantages
- High-density storage: 64 Gbit capacity delivers substantial non-volatile storage in a single device.
- Parallel interface compatibility: Parallel memory interface supports designs using parallel data buses.
- Flexible supply range: 2.7 V to 3.6 V operation enables use with a range of 3.3 V system rails.
- Standard TSOP footprint: 48-TSOP I package simplifies PCB layout and mechanical integration.
- Wide temperature tolerance: -40°C to 85°C rating supports deployment across varied thermal environments.
Why Choose MT29F64G08CBAAAWP-IT:A?
The MT29F64G08CBAAAWP-IT:A combines high-density NAND flash capacity with a parallel interface and a standard 48-TSOP I package to simplify integration into systems that require substantial non-volatile storage. Its 2.7 V to 3.6 V supply range and -40°C to 85°C operating temperature make it appropriate for designs with broad voltage and temperature requirements.
This device is suited to engineering and procurement teams seeking a compact, high-capacity parallel flash memory option that aligns with common board footprints and supply rails, offering predictable integration characteristics based on the provided package, voltage, and temperature specifications.
Request a quote or submit a pricing inquiry for the MT29F64G08CBAAAWP-IT:A to obtain availability and lead-time information.
