MT29F64G08CBAAAL74A3WC1P

The MT29F64G08CBAAAL74A3WC1P is a 64 Gbit non-volatile FLASH memory organized as 8G × 8 and implemented as a parallel NAND die. It provides high-density NAND storage in a die form factor for integration into systems that require raw parallel FLASH memory.

Key characteristics include NAND FLASH technology, a parallel memory interface, a supply voltage range of 2.7 V to 3.6 V, and an operating temperature range of 0°C to 70°C, making it suitable for designs that need dense on-board non-volatile storage with direct parallel access.

Key Features

• Memory Type Non-volatile FLASH memory based on NAND technology for persistent data retention.
• Capacity & Organization 64 Gbit capacity, organized as 8G × 8 to provide byte-wide parallel access.
• Interface Parallel memory interface for direct parallel access to the NAND die.
• Voltage Operates from 2.7 V to 3.6 V, enabling compatibility with common 3 V system supply rails.
• Operating Temperature Specified for 0°C to 70°C (TA), suitable for room-temperature and many consumer-grade environments.
• Package Supplied as a die, allowing custom integration into multi-die packages or PCB-level embedding.

Typical Applications

• Embedded storage — Used where high-density non-volatile memory is required inside embedded platforms that support a parallel NAND interface.
• Firmware and code storage — Retains firmware, boot code, or large lookup tables in systems that access FLASH via a parallel bus.
• Memory arrays and custom modules — Integrated as raw die in multi-die stacks or custom memory modules requiring 64 Gbit NAND capacity.

Unique Advantages

• High density in die form — 64 Gbit capacity delivered as a die enables space-efficient, high-capacity integration for custom assemblies.
• Parallel interface simplicity — Byte-wide parallel organization (8G × 8) facilitates direct parallel access patterns for controllers designed for NAND die interaction.
• Flexible supply range — 2.7 V to 3.6 V operation supports common 3 V system rails without additional voltage translation.
• Specified operating range — 0°C to 70°C qualification provides clear thermal limits for system design and deployment.
• Suitable for custom packaging — Die-level supply enables integration into bespoke packages or module-level solutions.

Why Choose IC FLASH 64GBIT PARALLEL DIE?

The MT29F64G08CBAAAL74A3WC1P positions itself as a straightforward solution for designers needing high-density NAND FLASH in a die form with a parallel interface. Its 64 Gbit capacity, 8G × 8 organization, and 2.7 V–3.6 V supply range make it appropriate for systems that require raw NAND die integration and direct parallel access.

Manufactured by Micron Technology Inc., this die-format NAND FLASH is suited to engineering teams building custom memory modules, embedded platforms, or multi-die assemblies where die-level integration and defined electrical and thermal specifications are important for long-term design planning.

Request a quote or contact sales to discuss availability, pricing, and integration options for the MT29F64G08CBAAAL74A3WC1P.