MT29F64G08CBAAAWP-ITZ:A TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 347 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBAAAWP-ITZ:A TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBAAAWP-ITZ:A TR is a 64 Gbit non-volatile FLASH NAND memory in a parallel interface. It delivers an 8G × 8 memory organization in a 48‑TSOP I (48‑TFSOP) package for designs that require onboard parallel FLASH storage.
Key attributes include FLASH‑NAND technology, a 2.7 V to 3.6 V supply range, and an industrial temperature rating of −40°C to 85°C, providing a compact packaged memory option for systems that specify those electrical and environmental windows.
Key Features
- Memory Type Non‑volatile FLASH (NAND) technology providing persistent storage without external power.
- Capacity & Organization 64 Gbit total capacity organized as 8G × 8 for byte‑wide parallel access.
- Interface Parallel memory interface suitable for designs that require parallel FLASH connectivity.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting common 3 V system rails.
- Package 48‑TSOP I / 48‑TFSOP footprint (0.724", 18.40 mm width) for PCB space planning and through‑hole profile considerations.
- Operating Temperature Rated for −40°C to 85°C (TA), matching common industrial temperature requirements.
Typical Applications
- Embedded Memory Storage Provides 64 Gbit of parallel NAND FLASH for systems needing non‑volatile local storage in a TSOP package.
- Industrial Electronics Supports applications that require operation across −40°C to 85°C with a 3 V supply range.
- Board‑Level Integration 48‑TSOP I package facilitates integration into compact PCB layouts where a parallel FLASH device is specified.
Unique Advantages
- High Density in a Compact Package: 64 Gbit capacity packaged in a 48‑TSOP I footprint to maximize storage per board area.
- Industry Temperature Range: Rated −40°C to 85°C to address applications with extended ambient temperature requirements.
- Flexible Power Range: Operates from 2.7 V to 3.6 V, enabling use with common 3 V power rails.
- Parallel Interface Simplicity: Byte‑wide 8G × 8 organization and parallel access reduce interface complexity for designs that specify parallel FLASH.
- Non‑Volatile Storage: NAND FLASH provides persistent data retention without continuous power.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBAAAWP-ITZ:A TR positions itself as a straightforward, high‑density parallel NAND FLASH option for applications requiring 64 Gbit of non‑volatile storage in a 48‑TSOP I package. Its supported voltage range and industrial temperature rating make it suitable for designs that specify those electrical and environmental parameters.
Choose this device when your design needs verified capacity, a parallel interface with byte‑wide organization, and a compact TSOP package for board integration and layout considerations.
Request a quote or contact sales to discuss pricing, availability, and lead times for MT29F64G08CBAAAWP-ITZ:A TR.
